Datasheet
1N5333B Series
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted, V
F
= 1.2 V Max @ I
F
= 1.0 A for all types)
Device
†
(Note 6)
Device
Marking
Zener Voltage (Note 7) Zener Impedance (Note 7)
Leakage
Current
I
R
(Note 8
)
DV
Z
(Note 9
)
I
ZM
(Note 10
)
V
Z
(Volts) @ I
ZT
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
I
ZK
I
R
@ V
R
Min Nom Max mA
W W
mA
mA Max
Volts A Volts mA
1N5363B, G 1N5363B 28.5 30 31.5 40 8 140 1 0.5 22.8 3.7 0.6 158
1N5364B, G 1N5364B 31.35 33 34.65 40 10 150 1 0.5 25.1 3.5 0.6 144
1N5365B, G 1N5365B 34.2 36 37.8 30 11 160 1 0.5 27.4 3.5 0.65 132
1N5366B, G 1N5366B 37.05 39 40.95 30 14 170 1 0.5 29.7 3.1 0.65 122
1N5367B, G 1N5367B 40.85 43 45.15 30 20 190 1 0.5 32.7 2.8 0.7 110
1N5368B, G 1N5368B 44.65 47 49.35 25 25 210 1 0.5 35.8 2.7 0.8 100
1N5369B, G 1N5369B 48.45 51 53.55 25 27 230 1 0.5 38.8 2.5 0.9 93
1N5370B, G 1N5370B 53.2 56 58.8 20 35 280 1 0.5 42.6 2.3 1.0 86
1N5371B, G 1N5371B 57 60 63 20 40 350 1 0.5 45.5 2.2 1.2 79
1N5372B, G 1N5372B 58.9 62 65.1 20 42 400 1 0.5 47.1 2.1 1.35 76
1N5373B, G 1N5373B 64.6 68 71.4 20 44 500 1 0.5 51.7 2.0 1.52 70
1N5374B, G 1N5374B 71.25 75 78.75 20 45 620 1 0.5 56 1.9 1.6 63
1N5375B, G 1N5375B 77.9 82 86.1 15 65 720 1 0.5 62.2 1.8 1.8 58
1N5376B, G 1N5376B 82.65 87 91.35 15 75 760 1 0.5 66 1.7 2.0 54.5
1N5377B, G 1N5377B 86.45 91 95.55 15 75 760 1 0.5 69.2 1.6 2.2 52.5
1N5378B, G 1N5378B 95 100 105 12 90 800 1 0.5 76 1.5 2.5 47.5
1N5379B, G 1N5379B 104.5 110 115.5 12 125 1000 1 0.5 83.6 1.4 2.5 43
1N5380B, G 1N5380B 114 120 126 10 170 1150 1 0.5 91.2 1.3 2.5 39.5
1N5381B, G 1N5381B 123.5 130 136.5 10 190 1250 1 0.5 98.8 1.2 2.5 36.6
1N5382B, G 1N5382B 133 140 147 8 230 1500 1 0.5 106 1.2 2.5 34
1N5383B, G 1N5383B 142.5 150 157.5 8 330 1500 1 0.5 114 1.1 3.0 31.6
1N5384B, G 1N5384B 152 160 168 8 350 1650 1 0.5 122 1.1 3.0 29.4
1N5385B, G 1N5385B 161.5 170 178.5 8 380 1750 1 0.5 129 1.0 3.0 28
1N5386B, G 1N5386B 171 180 189 5 430 1750 1 0.5 137 1.0 4.0 26.4
1N5387B, G 1N5387B 180.5 190 199.5 5 450 1850 1 0.5 144 0.9 5.0 25
1N5388B, G 1N5388B 190 200 210 5 480 1850 1 0.5 152 0.9 5.0 23.6
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
6. TOLERANCE AND TYPE NUMBER DESIGNATION
The JEDEC type numbers shown indicate a tolerance of ±5%.
7. ZENER VOLTAGE (V
Z
) and IMPEDANCE (I
ZT
and I
ZK
)
Test conditions for zener voltage and impedance are as follows: I
Z
is applied 40 ±10 ms prior to reading. Mounting contacts are located 3/8″
to 1/2″ from the inside edge of mounting clips to the body of the diode (T
A
= 25°C +8°C, −2°C).
8. SURGE CURRENT (I
R
)
Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width, PW, of 8.3 ms. The data
given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting
the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located
as specified in Note 7 (T
A
= 25°C +8°C, −2°C).
9. VOLTAGE REGULATION (DV
Z
)
The conditions for voltage regulation are as follows: V
Z
measurements are made at 10% and then at 50% of the I
Z
max value listed in the
electrical characteristics table. The test current time duration for each V
Z
measurement is 40 ±10 ms. Mounting contact located as specified
in Note 7 (T
A
= 25°C +8°C, −2°C).
10.MAXIMUM REGULATOR CURRENT (I
ZM
)
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the B−suffix device. The actual
I
ZM
for any device may not exceed the value of 5 watts divided by the actual V
Z
of the device. T
L
= 75°C at 3/8″ maximum from the device
body.
†The “G’’ suffix indicates Pb−Free package available.