Datasheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsTransistor (BJT) - Discrete TO 3 1

February, 2006 − Rev. 5

1 Publication Order Number:

2N3055A/D

2N3055A (NPN)

MJ15015, MJ15016 (PNP)

MJ15015 and MJ15016 are Preferred Devices

Complementary Silicon

High−Power Transistors

These PowerBaset complementary transistors are designed for

high power audio, stepping motor and other linear applications. These

devices can also be used in power switching circuits such as relay or

solenoid drivers, dc−to−dc converters, inverters, or for inductive loads

requiring higher safe operating area than the 2N3055.

Features

• Current−Gain − Bandwidth−Product @ I

= 1.0 Adc

= 0.8 MHz (Min) − NPN

= 2.2 MHz (Min) − PNP

• Safe Operating Area − Rated to 60 V and 120 V, Respectively

• Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating Symbol Value Unit

Collector−Emitter Voltage

2N3055A

MJ15015, MJ15016

CEO

120

Vdc

Collector−Base Voltage

2N3055A

MJ15015, MJ15016

CBO

100

200

Vdc

Collector−Emitter Voltage Base

Reversed Biased 2N3055A

MJ15015, MJ15016

CEV

100

200

Vdc

Emitter−Base Voltage V

EBO

7.0 Vdc

Collector Current − Continuous I

15 Adc

Base Current I

7.0 Adc

Total Device Dissipation @ T

= 25_C

Derate above 25_C 2N3055A

Total Device Dissipation @ T

= 25_C

Derate above 25_C

MJ15015, MJ15016

115

0.65

180

1.03

W/_C

Operating and Storage Junction

Temperature Range

, T

stg

−65 to +200

THERMAL CHARACTERISTICS

Characteristics Symbol Max Max Unit

Thermal Resistance, Junction−to−Case

1.52 0.98

_C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Indicates JEDEC Registered Data. (2N3055A)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

15 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60, 120 VOLTS − 115, 180 WATT

http://onsemi.com

MARKING DIAGRAMS

2N3055AG

AYWW

MEX

TO−204AA (TO−3)

CASE 1−07

STYLE 1

2N3055A = Device Code

MJ1501x = Device Code

x = 5 or 6

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

MEX = Country of Origin

Preferred devices are recommended choices for future use

and best overall value.

MJ1501xG

AYWW

MEX

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

Summary of content (6 pages)

PAGE 1
2N3055A (NPN) MJ15015, MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055. Features • Current−Gain − Bandwidth−Product @ IC = 1.
PAGE 2
N3055A (NPN) MJ15015, MJ15016 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ
PAGE 3
PD(AV), AVERAGE POWER DISSIPATION (W) 2N3055A (NPN) MJ15015, MJ15016 (PNP) 200 150 MJ15015 MJ15016 100 2N3055A 50 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. Power Derating 200 TJ = 150°C hFE , DC CURRENT GAIN 100 70 50 − 55 °C 30 20 25°C VCE = 4.0 V 10 7 5 3 2 0.2 0.3 0.5 0.7 1 2 3 5 IC, COLLECTOR CURRENT (AMP) 7 10 15 2.8 TJ = 25°C 2.4 2 IC = 1 A 1.6 0.8 0.4 0 0.005 0.01 0.
PAGE 4
2N3055A (NPN) MJ15015, MJ15016 (PNP) 10 7 5 VCC + 30 V t, TIME ( s) μ 3 7.5 W 25 ms +13 V SCOPE 30 W 0 2 tr 1 0.7 0.5 0.3 1N6073 −11 V VCC = 30 V IC/IB = 10 TJ = 25°C 0.2 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% −5 V 0.1 td 0.2 10 7 5 400 3 200 7 10 15 TJ = 25°C ts 2 tf 0.1 0.7 0.5 0.3 0.2 0.1 0.5 0.7 1 2 3 5 IC, COLLECTOR CURRENT (AMP) Figure 7. Turn−On Time C, CAPACITANCE (pF) t, TIME ( s) μ Figure 6. Switching Times Test Circuit (Circuit shown is for NPN) 0.
PAGE 5
2N3055A (NPN) MJ15015, MJ15016 (PNP) COLLECTOR CUT−OFF REGION NPN PNP 10,000 1000 VCE = 30 V 1000 IC, COLLECTOR CURRENT ( A) μ IC, COLLECTOR CURRENT ( A) μ VCE = 30 V 100 TJ = 150°C 10 100°C 1.0 IC = ICES REVERSE 0.1 FORWARD 100 10 TJ = 150°C 1.0 100°C IC = ICES 0.1 REVERSE 0.01 FORWARD 25°C 25°C 0.01 + 0.2 + 0.1 0 − 0.1 − 0.2 − 0.3 − 0.4 VBE, BASE−EMITTER VOLTAGE (VOLTS) 0.001 − 0.2 − 0.5 Figure 10. 2N3055A, MJ15015 + 0.4 0 + 0.1 + 0.2 + 0.
PAGE 6
2N3055A (NPN) MJ15015, MJ15016 (PNP) PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z A N C −T− E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 −Q− 0.13 (0.005) M INCHES MIN MAX 1.550 REF −−− 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.