Datasheet

2N3055A (NPN) MJ15015, MJ15016 (PNP)
http://onsemi.com
5
COLLECTOR CUT−OFF REGION
10,000
+0.2
Figure 10. 2N3055A, MJ15015
V
BE
, BASE−EMITTER VOLTAGE (VOLTS)
1000
100
10
1.0
, COLLECTOR CURRENT (A)μI
C
0.1
0.01
+0.1 0 −0.1 −0.2 −0.3 −0.4 −0.5
V
CE
= 30 V
T
J
= 150°C
100°C
25°C
REVERSE
FORWARD
I
C
= I
CES
NPN
1000
−0.2
Figure 11. MJ15016
V
BE
, BASE−EMITTER VOLTAGE (VOLTS)
100
10
1.0
0.1
, COLLECTOR CURRENT (A)μI
C
0.01
0.001
−0.1 0 +0.1 +0.2 +0.3
V
CE
= 30 V
T
J
= 150°C
100°C
25°C
REVERSE FORWARD
I
C
= I
CES
PNP
+0.4 +0.5
20
Figure 12. Forward Bias Safe Operating Area
2N3055A
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10
5
1
10 20 10060
2
I
C
, COLLECTOR CURRENT (AMPS)
dc
30 ms
1 ms
100 ms
100 ms
20
Figure 13. Forward Bias Safe Operating Area
MJ15015, MJ15016
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10
5.0
0.2
15 20 10060
2.0
I
C
, COLLECTOR CURRENT (AMP)
dc
0.1ms
100ms
BONDING WIRE LIMIT
THERMAL LIMIT @ T
C
= 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
1.0
0.5
30 120
1.0ms
BONDING WIRE LIMIT
THERMAL LIMIT @ T
C
= 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe Operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 12 and 13 is based on T
C
= 25_C;
T
J(pk)
is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated for temperature according to Figure 1.
ORDERING INFORMATION
Device Package Shipping
2N3055A TO−204
100 Units / Tray
2N3055AG TO−204
(Pb−Free)
MJ15015 TO−204
100 Units / Tray
MJ15015G TO−204
(Pb−Free)
MJ15016 TO−204
MJ15016G TO−204
(Pb−Free)