Datasheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsTransistor (BJT) - Discrete TO 3 1

December, 2005 − Rev. 6

1 Publication Order Number:

2N3055/D

2N3055(NPN), MJ2955(PNP)

Preferred Device

Complementary Silicon

Power Transistors

Complementary silicon power transistors are designed for

general−purpose switching and amplifier applications.

Features

• DC Current Gain − h

= 20−70 @ I

= 4 Adc

• Collector−Emitter Saturation Voltage −

CE(sat)

= 1.1 Vdc (Max) @ I

= 4 Adc

• Excellent Safe Operating Area

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

CEO

60 Vdc

Collector−Emitter Voltage V

CER

70 Vdc

Collector−Base Voltage V

100 Vdc

Emitter−Base Voltage V

7 Vdc

Collector Current − Continuous I

15 Adc

Base Current I

7 Adc

Total Power Dissipation @ T

= 25°C

Derate Above 25°C

115

0.657

W/°C

Operating and Storage Junction

Temperature Range

, T

stg

−65 to +200

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

160

0 25 50 75 100 125 150 175 200

Figure 1. Power Derating

, CASE TEMPERATURE (°C)

, POWER DISSIPATION (WATTS)

140

120

100

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

15 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

60 VOLTS, 115 WATTS

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

Device Package Shipping

ORDERING INFORMATION

2N3055 TO−204AA 100 Units / Tray

MJ2955G TO−204AA

(Pb−Free)

TO−204AA (TO−3)

CASE 1−07

STYLE 1

100 Units / Tray

2N3055G TO−204AA

(Pb−Free)

100 Units / Tray

MJ2955 TO−204AA

100 Units / Tray

MARKING DIAGRAM

xxxx55 = Device Code

xxxx = 2N30 or MJ20

G = Pb−Free Package

A = Location Code

YY = Year

WW = Work Week

MEX = Country of Orgin

xxxx55G

AYYWW

MEX

Summary of content (4 pages)

PAGE 1
2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features http://onsemi.com • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − • • 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS VCE(sat) = 1.
PAGE 2
N3055(NPN), MJ2955(PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol Max Unit RqJC 1.
PAGE 3
2N3055(NPN), MJ2955(PNP) 500 200 TJ = 150°C 200 25°C 100 − 55 °C 70 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 70 − 55 °C 50 30 20 10 10 0.1 2.0 TJ = 25°C 1.6 4.0 A 8.0 A 1.2 0.8 0.4 0 5.0 10 20 50 100 200 500 1000 2000 IB, BASE CURRENT (mA) 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 4.
PAGE 4
2N3055(NPN), MJ2955(PNP) PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY. A N C −T− E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L V SEATING PLANE 2 H G B M T Y 1 −Q− 0.13 (0.005) INCHES MIN MAX 1.550 REF −−− 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.