Datasheet

2N3442
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3
ACTIVE REGION SAFE OPERATING AREA INFORMATION
There are two limitations on the power−handling
ability of a transistor: average junction temperature and
second breakdown. Safe operating area curves indicate
I
C
− V
CE
limits of the transistor that must be observed
for reliable operation, i.e., the transistor must not be
subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 200_C; T
C
is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown.
20
2.0
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.2
5.0 20 100 200
I
C
, COLLECTOR CURRENT (AMP)
CURRENT LIMIT
THERMAL LIMIT @ T
C
= 25°C
SINGLE PULSE
SECOND BREAKDOWN LIMIT
dc
1.0 ms
10 ms
0.5
0.3
3.0 7.0 10 30 50 70
30 ms
50 ms
100 ms
T
J
= 200°C
100 ms
Figure 2. 2N3442
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS
)
400
0.1
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
4.0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10
40
20
100
60
h
FE
, DC CURRENT GAIN
T
J
= 150°C
25°C
−55 °C
V
CE
= 4.0 V
6.0
10
200
7.0
Figure 4. Collector−Saturation Region
1.4
2.0
I
B
, BASE CURRENT (mA)
0
5.0 10 20 50 100 200 500 1.0k 2.0k
1.0
0.8
0.6
0.4
I
C
= 1.0 A
T
J
= 25°C
4.0 A 8.0 A
1.2
0.2
2.0 A