Datasheet

ManualsBrandsON Semiconductor ManualsDiscrete SemiconductorsPower Transistor, TO-204, NPN, 60V

October, 2006 − Rev. 11

1 Publication Order Number:

2N3771/D

2N3771, 2N3772

2N3771 is a Preferred Device

High Power NPN Silicon

Power Transistors

These devices are designed for linear amplifiers, series pass

regulators, and inductive switching applications.

Features

• Forward Biased Second Breakdown Current Capability

S/b

= 3.75 Adc @ V

= 40 Vdc − 2N3771

= 2.5 Adc @ V

= 60 Vdc − 2N3772

• Pb−Free Packages are Available*

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Symbol

ÎÎÎ

2N3771

ÎÎÎÎ

2N3772

ÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Voltage

ÎÎÎ

CEO

ÎÎÎ

ÎÎÎÎ

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Voltage

ÎÎÎ

CEX

ÎÎÎ

ÎÎÎÎ

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector−Base Voltage

ÎÎÎ

ÎÎÎÎ

100

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter−Base Voltage

ÎÎÎ

5.0

ÎÎÎÎ

7.0

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current − Continuous

Peak

ÎÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current − Continuous

Peak

ÎÎÎ

7.5

ÎÎÎÎ

5.0

ÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ T

= 25°C

Derate above 25°C

ÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎ

150

0.855

ÎÎ

W/°C

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎ

, T

stg

ÎÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎ

–65 to +200

ÎÎ

°C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance,

Junction−to−Case

ÎÎÎ

ÎÎÎÎÎÎ

1.17

ÎÎ

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC registered data.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

20 and 30 AMPERE

POWER TRANSISTORS

NPN SILICON

40 and 60 VOLTS, 150 WATTS

MARKING

DIAGRAM

TO−204AA (TO−3)

CASE 1−07

STYLE 1

2N377x = Device Code

x = 1 or 2

G = Pb−Free Package

A = Assembly Location

YY = Year

WW = Work Week

MEX = Country of Origin

2N377xG

AYYWW

MEX

2N3772 TO−204 100 Units / Tray

2N3772G TO−204

(Pb−Free)

100 Units / Tray

Device Package

Shipping

2N3771 TO−204 100 Units / Tray

2N3771G TO−204

(Pb−Free)

100 Units / Tray

ORDERING INFORMATION

Summary of content (5 pages)

PAGE 1
2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features http://onsemi.com • Forward Biased Second Breakdown Current Capability • IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.
PAGE 2
N3771, 2N3772 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î
PAGE 3
2N3771, 2N3772 PD, POWER DISSIPATION (WATTS) 200 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 1. Power Derating 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.02 0.03 0.02 P(pk) qJC(t) = r(t) qJC qJC = 0.875°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) − TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.05 0.01 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 0.
PAGE 4
2N3771, 2N3772 VCC + 30 V 10 5.0 25 ms RC +11 V 2.0 SCOPE 0 D1 51 − 9.0 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% tr 0.5 0.2 0.1 − 4 V td 0.05 RB AND RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.02 D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA 0.01 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 4.
PAGE 5
2N3771, 2N3772 PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z A N C −T− E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M −Y− L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 −Q− 0.13 (0.005) DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF −−− 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.