Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsTransistor (BJT) - Discrete TO 92 3 1

February, 2010 − Rev. 4

1 Publication Order Number:

2N3906/D

2N3906

General Purpose

Transistors

PNP Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage V

CEO

40 Vdc

Collector − Base Voltage V

CBO

40 Vdc

Emitter − Base Voltage V

EBO

5.0 Vdc

Collector Current − Continuous I

200 mAdc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

625

5.0

mW/°C

Total Power Dissipation @ T

= 60°C P

250 mW

Total Device Dissipation @ T

= 25°C

Derate above 25°C

1.5

mW/°C

Operating and Storage Junction

Temperature Range

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS (Note 1)

Characteristic

Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

200 °C/W

Thermal Resistance, Junction−to−Case

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates Data in addition to JEDEC Requirements.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

COLLECTOR

BASE

EMITTER

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

MARKING DIAGRAM

3906

ALYWG

A = Assembly Location

L = Wafer Lot

Y = Year

W = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

TO−92

CASE 29

STYLE 1

Summary of content (7 pages)

PAGE 1
2N3906 General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.
PAGE 2
N3906 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc (IC = 10 mAdc, IE = 0) V(BR)CBO 40 − Vdc (IE = 10 mAdc, IC = 0) OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 2) Collector −Base Breakdown Voltage V(BR)EBO 5.0 − Vdc Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL − 50 nAdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − 50 nAdc (IC = 0.
PAGE 3
2N3906 ORDERING INFORMATION Package Shipping† TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk TO−92 2000 / Tape & Reel 2N3906RL1G TO−92 (Pb−Free) 2000 / Tape & Reel 2N3906RLRA TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 / Tape & Ammo Box TO−92 (Pb−Free) 2000 / Tape & Ammo Box TO−92 2000 / Tape & Ammo Box TO−92 (Pb−Free) 2000 / Tape & Ammo Box Device 2N3906 2N3906G 2N3906RL1 2N3906RLRAG 2N3906RLRM 2N3906RLRMG 2N3906RLRP 2N3906RLRPG †For informati
PAGE 4
2N3906 TYPICAL TRANSIENT CHARACTERISTICS 10 5000 7.0 3000 2000 Cobo 5.0 Q, CHARGE (pC) CAPACITANCE (pF) TJ = 25°C TJ = 125°C Cibo 3.0 2.0 VCC = 40 V IC/IB = 10 1000 700 500 300 200 QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 100 70 50 20 30 40 1.0 2.0 3.0 Figure 3. Capacitance 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 4.
PAGE 5
2N3906 TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = − 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 W IC = 1.0 mA 4.0 f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 mA 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 1.0 0 0.1 0.2 0.4 IC = 1.0 mA 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 IC = 0.5 mA 8 6 4 IC = 50 mA 2 IC = 100 mA 0 100 0.1 0.2 40 0.
PAGE 6
2N3906 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 - 55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 13. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.1 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 14.
PAGE 7
2N3906 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.