Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsTransistor (BJT) - Discrete TO 92 3 1

March, 2007 − Rev. 3

1 Publication Order Number:

2N4403/D

2N4403

Preferred Device

General Purpose

Transistors

PNP Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage V

CEO

40 Vdc

Collector − Base Voltage V

CBO

40 Vdc

Emitter − Base Voltage V

EBO

5.0 Vdc

Collector Current − Continuous I

600 mAdc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T

= 25°C

Derate above 25°C

1.5

mW/°C

Operating and Storage Junction

Temperature Range

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient R

200 °C/W

Thermal Resistance, Junction−to−Case R

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

MARKING DIAGRAM

4403

AYWW G

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

COLLECTOR

BASE

EMITTER

Preferred devices are recommended choices for future

use and best overall value.

2N4403 = Device Code

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

TO−92

CASE 29

STYLE 1

Summary of content (7 pages)

PAGE 1
2N4403 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.
PAGE 2
N4403 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 40 − Vdc (IE = 0.1 mAdc, IC = 0) Emitter−Base Breakdown Voltage V(BR)EBO 5.0 − Vdc Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV − 0.1 mAdc Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.
PAGE 3
2N4403 SWITCHING TIME EQUIVALENT TEST CIRCUIT − 30 V − 30 V 200 W < 2 ns +2 V +14 V 0 0 1.0 kW − 16 V CS* < 10 pF 10 to 100 ms, DUTY CYCLE = 2% 200 W < 20 ns 1.0 kW −16 V CS* < 10 pF 1.0 to 100 ms, DUTY CYCLE = 2% + 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn−On Time Figure 2. Turn−Off Time TRANSIENT CHARACTERISTICS 25°C 100°C 30 Ceb 10 7.0 Ccb 5.0 VCC = 30 V IC/IB = 10 3.0 Q, CHARGE (nC) CAPACITANCE (pF) 20 10 7.
PAGE 4
2N4403 100 100 IC/IB = 10 70 70 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 30 20 t r , RISE TIME (ns) t, TIME (ns) 50 30 20 10 10 7.0 7.0 5.0 VCC = 30 V IC/IB = 10 50 10 20 30 50 70 100 200 300 5.0 500 10 20 30 50 70 100 200 300 500 500 1 k 2 k 5 k 10 k 20 k RS, SOURCE RESISTANCE (OHMS) 50 k IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn−On Time Figure 6.
PAGE 5
2N4403 h PARAMETERS VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the 2N4403 lines, and the same units were used to develop the correspondingly−numbered curves on each graph. 100 k 700 50 k hie , INPUT IMPEDANCE (OHMS) 1000 hfe , CURRENT GAIN 500 300 200 2N4403 UNIT 1 2N4403 UNIT 2 100 70 50 0.1 0.2 0.3 0.5 0.
PAGE 6
2N4403 STATIC CHARACTERISTICS h FE , NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125°C 25°C 1.0 − 55°C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.
PAGE 7
2N4403 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.