Data Sheet
2N4403
http://onsemi.com
4
Figure 5. Turn−On Time
I
C
, COLLECTOR CURRENT (mA)
20
30
50
5.0
10
7.0
Figure 6. Rise Time
I
C
, COLLECTOR CURRENT (mA)
t, TIME (ns)
70
100
10 20 50 70 100 200 300 50030
I
C
/I
B
= 10
t
r
@ V
CC
= 30 V
t
r
@ V
CC
= 10 V
t
d
@ V
BE(off)
= 2 V
t
d
@ V
BE(off)
= 0
20
30
50
5.0
10
7.0
70
100
10 20 50 70 100 200 300 50030
V
CC
= 30 V
I
C
/I
B
= 10
t
r
, RISE TIME (ns)
Figure 7. Storage Time
I
C
, COLLECTOR CURRENT (mA)
t
s
, STORAGE TIME (ns)′
10 20 50 70 100 200 300 50030
100
20
70
50
200
30
I
C
/I
B
= 10
I
C
/I
B
= 20
I
B1
= I
B2
t
s
′ = t
s
− 1/8 t
f
6
8
10
0
4
2
0.1 2.0 5.0 10 20 501.00.50.20.01 0.02 0.05 100
Figure 8. Frequency Effects
f, FREQUENCY (kHz)
SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
V
CE
= −10 Vdc, T
A
= 25°C; Bandwidth = 1.0 Hz
NF, NOISE FIGURE (dB)
I
C
= 1.0 mA, R
S
= 430 W
I
C
= 500 mA, R
S
= 560 W
I
C
= 50 mA, R
S
= 2.7 kW
I
C
= 100 mA, R
S
= 1.6 kW
R
S
= OPTIMUM SOURCE RESISTANCE
50 100 200 500 1k 2k 5k 10k 20k 50k
6
8
10
0
4
2
NF, NOISE FIGURE (dB)
Figure 9. Source Resistance Effects
R
S
, SOURCE RESISTANCE (OHMS)
f = 1 kHz
I
C
= 50 mA
100 mA
500 mA
1.0 mA
