Data Sheet

© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 5
1 Publication Order Number:
2N5550/D
2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage
2N5550
2N5551
V
CEO
140
160
Vdc
Collector − Base Voltage
2N5550
2N5551
V
CBO
160
180
Vdc
EmitterBase Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
600 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient R
q
JA
200 °C/W
Thermal Resistance, Junction−to−Case R
q
JC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
MARKING DIAGRAM
2N
555x
AYWW G
G
x = 0 or 1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 1

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