Data Sheet

2N5551 / MMBT5551 — NPN General-Purpose Amplifier
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5551 / MMBT5551 Rev. 1.1.0 3
Electrical Characteristics
(4)
Values are at T
A
= 25°C unless otherwise noted.
Note:
4. PCB board size FR-4 76 x 114 x 0.6 T mm
3
(3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size.
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= 1.0 mA, I
B
= 0 160 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 100 μA, I
E
= 0 180 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10 μA, I
C
= 0 6.0 V
I
CBO
Collector Cut-Off Current
V
CB
= 120 V, I
E
= 0 50 nA
V
CB
= 120 V, I
E
= 0, T
A
= 100°C50μA
I
EBO
Emitter Cut-Off Current V
EB
= 4.0 V, I
C
= 0 50 nA
On Characteristics
h
FE
DC Current Gain
I
C
= 1.0 mA, V
CE
= 5.0 V 80
I
C
= 10 mA, V
CE
= 5.0 V 80 250
I
C
= 50 mA, V
CE
= 5.0 V 30
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA 0.15 V
I
C
= 50 mA, I
B
= 5.0 mA 0.20 V
V
BE(sat)
Base-Emitter On Voltage
I
C
= 10 mA, I
B
= 1.0 mA 1.0 V
I
C
= 50 mA, I
B
= 5.0 mA 1.0 V
Small-Signal Characteristics
f
T
Current Gain Bandwidth Product
I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
100 MHz
C
obo
Output Capacitance V
CB
= 10 V, I
E
= 0, f = 1.0 MHz 6.0 pF
C
ibo
Input Capacitance V
BE
= 0.5 V, I
C
= 0, f = 1.0 MHz 20 pF
H
fe
Small-Signal Current Gain I
C
= 1.0 mA, V
CE
= 10 V, f = 1.0 kHz 50 250
NF Noise Figure
I
C
= 250 μA, V
CE
= 5.0 V,
R
S
=1.0 kΩ, f=10 Hz to 15.7 kHz
8.0 dB