Data Sheet

2N5551 / MMBT5551 — NPN General-Purpose Amplifier
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5551 / MMBT5551 Rev. 1.1.0 4
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain vs. Collector
Current
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base-Emitter On Voltage vs. Collector
Current
Figure 5. Collector Cut-Off Current vs. Ambient
Temperature
Figure 6. Input and Output Capacitance vs. Reverse
Voltage
1 10 100 1000
0
50
100
150
200
250
125
o
C
100
o
C
75
o
C
-40
o
C
25
o
C
V
CE
=5V
h
FE
- DC CURRENT GAIN
I
C
- COLLECTOR CURRENT [mA]
1 10 100
0.01
0.1
1
10
?10
125
o
C
100
o
C
75
o
C
-40
o
C
25
o
C
V
CE(SAT)
- COLLECTOR-EMITTER VOLTAGE [V]
I
C
- COLLECTOR CURRENT [mA]
110100
0.2
0.4
0.6
0.8
1.0
125
o
C
100
o
C
75
o
C
-40
o
C
25
o
C
V
BE(SAT)
- BASE-EMITTER VOLTAGE [V]
I
C
- COLLECTOR CURRENT [mA]
1 10 100 1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
A
= 125
o
C
T
A
= 100
o
C
T
A
= 75
o
C
T
A
= -40
o
C
T
A
= 25
o
C
V
BE(ON)
- BASE-EMITTER VOLTAGE [V]
I
C
- COLLECTOR CURRENT [mA]
Ω
25 50 75 100 125
1
10
50
T - AMBIENT TEMP ERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
°
V = 10 0V
CB
β
β
012345678910
1
10
100
C
OB
C
IB
CAPACITANCE [pF]
REVERSE BIAS VOLTAGE [V]