Data Sheet

2N5551 / MMBT5551 — NPN General-Purpose Amplifier
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5551 / MMBT5551 Rev. 1.1.0 5
Typical Performance Characteristics (Continued)
Figure 7. Collector- Emitter Breakdown Voltage
with Resistance between Emitter-Base
Figure 8. Small Signal Current Gain vs. Collector
Current
Figure 9. Power Dissipation vs. Ambient
Temperature
Between Emitter-Base
0.1 1 10 100 1000
160
180
200
220
240
260
RESISTANCE (k )
BV - BREAKDOWN VOLTAGE (V)
Ω
CER
I = 1.0 mA
C
vs
Collector
Current
11050
0
4
8
12
16
I - COLLECTOR CURRENT (mA)
h - SMALL SIGNAL CURRENT GAIN
C
FE
FREG = 20 MHz
V = 10V
CE
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
SOT-23