Datasheet

ManualsBrandsON SEMICONDUCTOR ManualsThyristors & Triacs2N6073A

 Semiconductor Components Industries, LLC, 2000

May, 2000 – Rev. 3

1 Publication Order Number:

2N6071/D

Preferred Device

Silicon Bidirectional Thyristors

Designed primarily for full-wave ac control applications, such as

light dimmers, motor controls, heating controls and power supplies; or

wherever full-wave silicon gate controlled solid-state devices are

needed. Triac type thyristors switch from a blocking to a conducting

state for either polarity of applied anode voltage with positive or

negative gate triggering.

• Sensitive Gate Triggering Uniquely Compatible for Direct Coupling

to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit

Logic Functions

• Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B

• Blocking Voltages to 600 Volts

• All Diffused and Glass Passivated Junctions for Greater Parameter

Uniformity and Stability

• Small, Rugged, Thermopad Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

• Device Marking: Device Type, e.g., 2N6071A, Date Code

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

Rating

Symbol Value Unit

*Peak Repetitive Off-State Voltage

(1)

= 40 to 110°C, Sine Wave,

50 to 60 Hz, Gate Open)

2N6071A,B

2N6073A,B

2N6075A,B

DRM,

RRM

200

400

600

Volts

*On-State RMS Current (T

= 85°C)

Full Cycle Sine Wave 50 to 60 Hz

T(RMS)

4.0 Amps

*Peak Non–repetitive Surge Current

(One Full cycle, 60 Hz, T

= +110°C)

TSM

30 Amps

Circuit Fusing Considerations

(t = 8.3 ms)

t 3.7 A

*Peak Gate Power

(Pulse Width ≤ 1.0 µs, T

= 85°C)

10 Watts

*Average Gate Power

(t = 8.3 ms, T

= 85°C)

G(AV)

0.5 Watt

*Peak Gate Voltage

(Pulse Width ≤ 1.0 µs, T

= 85°C)

5.0 Volts

*Operating Junction Temperature Range T

–40 to

+110

°C

*Storage Temperature Range T

stg

–40 to

+150

°C

Mounting Torque (6-32 Screw)

(2)

— 8.0 in. lb.

*Indicates JEDEC Registered Data.

(1) V

DRM

and V

RRM

for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

(2) Torque rating applies with use of a compression washer. Mounting torque in

excess of 6 in. lb. does not appreciably lower case-to-sink thermal

resistance. Main terminal 2 and heatsink contact pad are common.

TRIACS

4 AMPERES RMS

200 thru 600 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

Device Package Shipping

ORDERING INFORMATION

2N6071A TO225AA 500/Box

http://onsemi.com

2N6071B TO225AA 500/Box

2N6073A TO225AA 500/Box

2N6073B TO225AA 500/Box

2N6075A TO225AA 500/Box

2N6075B TO225AA 500/Box

TO–225AA

(formerly TO–126)

CASE 077

STYLE 5

PIN ASSIGNMENT

Main Terminal 2

Gate

Main Terminal 1

MT1

MT2

Summary of content (8 pages)

PAGE 1
2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.
PAGE 2
N6071A/B Series THERMAL CHARACTERISTICS Symbol Max Unit *Thermal Resistance, Junction to Case Characteristic RθJC 3.
PAGE 3
2N6071A/B Series SAMPLE APPLICATION: TTL-SENSITIVE GATE 4 AMPERE TRIAC TRIGGERS IN MODES II AND III 14 0V MC7400 4 7 VEE = 5.0 V + –VEE LOAD 2N6071A 510 Ω 115 VAC 60 Hz Trigger devices are recommended for gating on Triacs. They provide: 1. Consistent predictable turn-on points. 2. Simplified circuitry. 3. Fast turn-on time for cooler, more efficient and reliable operation.
PAGE 4
2N6071A/B Series Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 Quadrant I (+) IGT GATE (–) IGT GATE MT1 MT1 REF REF IGT – + IGT (–) MT2 Quadrant III (–) MT2 Quadrant IV (+) IGT GATE (–) IGT GATE MT1 MT1 REF REF – MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in–phase signals (using standard AC lines) quadrants I and III are used.
PAGE 5
2N6071A/B Series 110 110 α = 30° TC , CASE TEMPERATURE (° C) TC , CASE TEMPERATURE (° C) 60° 100 α = 30° 60° 90° 90 120° 180° dc a 80 α 70 120° 90 180° a 80 70 1.0 2.0 3.0 IT(AV), AVERAGE ON-STATE CURRENT (AMP) 4.0 α = CONDUCTION ANGLE 0 Figure 2. RMS Current Derating 8.0 8.0 a a 180° a 6.0 P(AV) , AVERAGE POWER (WATTS) P(AV) , AVERAGE POWER (WATTS) 4.0 1.0 2.0 3.0 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 1. Average Current Derating dc 120° α = CONDUCTION ANGLE 90° 60° 4.
PAGE 6
2N6071A/B Series 40 IH, HOLDING CURRENT (NORMALIZED) 3.0 30 20 10 ITM , ON-STATE CURRENT (AMP) 7.0 5.0 2.0 1.0 0.7 0.5 0.3 –60 TJ = 110°C 3.0 GATE OPEN APPLIES TO EITHER DIRECTION –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) 2.0 Figure 8. Typical Holding Current TJ = 25°C 1.0 34 32 PEAK SINE WAVE CURRENT (AMP) 0.7 0.5 0.3 0.2 30 28 26 24 TJ = –40 to +110°C f = 60 Hz 22 20 18 16 0.1 0 1.0 2.0 3.0 4.0 14 1.0 5.0 2.0 4.0 5.0 7.
PAGE 7
2N6071A/B Series PACKAGE DIMENSIONS TO–225AA (formerly TO–126) CASE 077–09 ISSUE W –B– U F Q –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.
PAGE 8
2N6071A/B Series ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein.