Datasheet

2N6071A/B Series
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
*Thermal Resistance, Junction to Case R
θJC
3.5 °C/W
Thermal Resistance, Junction to Ambient R
θJA
75 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM;
Gate Open) T
J
= 25°C
T
J
= 110°C
I
DRM,
I
RRM
—
—
—
—
10
2
µA
mA
ON CHARACTERISTICS
*Peak On-State Voltage
(1)
(I
TM
= 6 A Peak)
V
TM
— — 2 Volts
*Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, R
L
= 100 Ohms, T
J
= –40°C)
All Quadrants
V
GT
— 1.4 2.5
Volts
Gate Non–Trigger Voltage
(Main Terminal Voltage = 12 Vdc, R
L
= 100 Ohms, T
J
= 110°C)
All Quadrants
V
GD
0.2 — —
Volts
*Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 1 Adc) (T
J
= –40°C)
(T
J
= 25°C)
I
H
—
—
—
—
30
15
mA
Turn-On Time
(I
TM
= 14 Adc, I
GT
= 100 mAdc)
t
gt
— 1.5 — µs
QUADRANT
(Maximum Value)
Type
I
GT
@ T
J
I
mA
II
mA
III
mA
IV
mA
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc R
L
= 100 ohms)
2N6071A
2N6073A
+25°C 5 5 5 10
(Main
Terminal
Voltage
=
12
Vdc
,
R
L
=
100
ohms)
2N6073A
2N6075A
–40°C 20 20 20 30
2N6071B
2N6073B
+25°C 3 3 3 5
2N6073B
2N6075B
–40°C 15 15 15 20
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
@ V
DRM
, T
J
= 85°C, Gate Open, I
TM
= 5.7 A, Exponential Waveform,
Commutating di/dt = 2.0 A/ms
dv/dt(c) — 5 — V/µs
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.