Datasheet

ManualsBrandsON Semiconductor ManualsDiscrete SemiconductorsPower Transistor, TO-204, NPN, 100V

Darlington Complementary

Silicon Power Transistors

. . . designed for general–purpose amplifier and low–frequency

switching applications.

• High DC Current Gain @ I

= 10 Adc –

= 2400 (Typ) – 2N6284

= 4000 (Typ) – 2N6287

• Collector–Emitter Sustaining Voltage –

CEO(sus)

= 100 Vdc (Min)

• Monolithic Construction with Built–In Base–Emitter Shunt

Resistors

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

Symbo

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

2N6283

2N6286

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

2N6284

2N6287

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

CEO

ÎÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

ÎÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

Collector Current – Continuous

Peak

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

0.5

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ T

25C

Derate above 25C

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

160

0.915

ÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

stg

ÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

ÎÎÎÎÎÎ

1.09

ÎÎÎ

C/W

*Indicates JEDEC Registered Data.

25 50 100 125 200

Figure 1. Power Derating

, CASE TEMPERATURE (°C)

, POWER DISSIPATION (WATTS)

160

140

0 75 150

100

120

175

ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

May, 2001 – Rev. 1

1 Publication Order Number:

2N6284/D

DARLINGTON

20 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

100 VOLTS

160 WATTS

2N6283

2N6284

2N6286

2N6287

CASE 1–07

TO–204AA

(TO–3)

NPN

PNP

Summary of content (8 pages)

PAGE 1
ON Semiconductor NPN Darlington Complementary Silicon Power Transistors 2N6283 . . . designed for general–purpose amplifier and low–frequency switching applications.
PAGE 2
N6283 2N6284 2N6286 2N6287 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ
PAGE 3
2N6283 2N6284 2N6286 2N6287 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS RB V2 RC TUT APPROX + 8.0 V 0 51 V1 APPROX 25 µs - 12 V tr, tf 10 ns DUTY CYCLE = 1.0% D1 8.0 k ts 50 + 4.0 V FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES 2.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.01 0.01 P(pk) RθJC(t) = r(t) RθJC RθJC = 1.09°C/W MAX 0.
PAGE 4
2N6283 2N6284 2N6286 2N6287 ACTIVE–REGION SAFE OPERATING AREA IC, COLLECTOR CURRENT (AMP) 50 20 0.5 ms 10 1.0 ms 5.0 5.0 ms 2.0 1.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e. the transistor must not be subjected to greater dissipation than the curves indicate.
PAGE 5
2N6283 2N6284 2N6286 2N6287 NPN 2N6284 hFE, DC CURRENT GAIN 10,000 7000 5000 VCE = 3.0 V 30,000 20,000 TJ = 150°C 10,000 3000 2000 1000 700 hFE, DC CURRENT GAIN 20,000 PNP 2N6287 25°C - 55°C 500 300 200 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 0.2 0.3 VCE = 3.0 V TJ = 150°C 7000 5000 25°C 3000 2000 - 55°C 1000 700 500 300 0.2 0.3 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 3.
PAGE 6
2N6283 2N6284 2N6286 2N6287 PNP 2N6287 + 5.0 + 4.0 + 3.0 *APPLIES FOR IC/IB ≤ hFE @ VCE 3.0 V 250 + 2.0 25°C to 150°C + 1.0 - 55°C to + 25°C 0 - 1.0 - 2.0 - 3.0 - 4.0 - 5.0 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) NPN 2N6284 *θVC for VCE(sat) 25°C to + 150°C θVB for VBE 0.2 0.3 - 55°C to + 25°C 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 + 5.0 + 4.0 *APPLIES FOR IC/IB ≤ + 3.0 hFE @ VCE 3.0 V 250 + 2.0 25°C to 150°C + 1.0 - 55°C to + 25°C 0 - 1.
PAGE 7
2N6283 2N6284 2N6286 2N6287 PACKAGE DIMENSIONS CASE 1–07 TO–204AA (TO–3) ISSUE Z A N C –T– E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M –Y– L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 –Q– 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.
PAGE 8
2N6283 2N6284 2N6286 2N6287 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein.