Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsFETsMOSFET 1 N-channel 400 mW

April, 2011 − Rev. 8

1 Publication Order Number:

2N7000/D

2N7000G

Small Signal MOSFET

200 mAmps, 60 Volts

N−Channel TO−92

Features

• AEC Qualified

• PPAP Capable

• This is a Pb−Free Device*

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain Source Voltage V

DSS

60 Vdc

Drain−Gate Voltage (R

= 1.0 MW)

DGR

60 Vdc

Gate−Source Voltage

− Continuous

− Non−repetitive (t

≤ 50 ms)

GSM

±20

±40

Vdc

Vpk

Drain Current

− Continuous

− Pulsed

200

500

mAdc

Total Power Dissipation @ T

= 25°C

Derate above 25°C

350

2.8

mW/°C

Operating and Storage Temperature

Range

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

357 °C/W

Maximum Lead Temperature for

Soldering Purposes, 1/16″ from case

for 10 seconds

300 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

N−Channel

Source

Drain

Gate

200 mAMPS

60 VOLTS

DS(on)

= 5 W

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

MARKING DIAGRAM

AND PIN ASSIGNMENT

7000

AYWW G

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

TO−92

CASE 29

STYLE 22

Summary of content (4 pages)

PAGE 1
2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features http://onsemi.com • AEC Qualified • PPAP Capable • This is a Pb−Free Device* 200 mAMPS 60 VOLTS RDS(on) = 5 W N−Channel MAXIMUM RATINGS Rating D Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain−Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) VGS VGSM ± 20 ± 40 Vdc Vpk ID 200 500 Total Power Dissipation @ TC = 25°C Derate above 25°C PD 350 2.
PAGE 2
N7000G ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)DSS 60 − Vdc − − 1.0 1.0 mAdc mAdc OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 10 mAdc) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125°C) Gate−Body Leakage Current, Forward IDSS (VGSF = 15 Vdc, VDS = 0) IGSSF − −10 nAdc (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.8 3.0 Vdc − − 5.0 6.0 − − 2.5 0.
PAGE 3
2N7000G 2.0 1.0 VDS = 10 V TA = 25°C 1.6 VGS = 10 V 1.4 9V 1.2 I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1.8 8V 1.0 7V 0.8 6V 0.6 0.4 5V 0.2 4V 3V 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9.0 0.8 125°C 0.6 0.4 0.2 10 0 2.4 2.2 1.8 VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 - 60 - 20 + 20 + 60 T, TEMPERATURE (°C) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 2.
PAGE 4
2N7000G PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.