Data Sheet

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.4 3
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Value Unit
TOTAL DEVICE
T
STG
Storage Temperature -40 to +125 °C
T
OPR
Operating Temperature -40 to +100 °C
T
J
Junction Temperature -40 to +125 °C
T
SOL
Lead Solder Temperature 260 for 10 seconds °C
P
D
Total Device Power Dissipation @ T
A
= 25°C 270 mW
Derate Above 25°C 3.3 mW/°C
EMITTER
I
F
Continuous Forward Current 80 mA
V
R
Reverse Voltage 3 V
I
F
(pk) Forward Current – Peak (300 µs, 2% Duty Cycle) 3.0 A
P
D
LED Power Dissipation @ T
A
= 25°C 120 mW
Derate above 25°C 2.0 mW/°C
DETECTOR
BV
CEO
Collector-Emitter Breakdown Voltage 30 V
BV
CBO
Collector-Base Breakdown Voltage 30 V
BV
ECO
Emitter-Collector Breakdown Voltage 5 V
P
D
Detector Power Dissipation @ T
A
= 25°C 150 mW
Derate Above 25°C 2.0 mW/°C
I
C
Continuous Collector Current 150 mA