Data Sheet

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.4 4
Electrical Characteristics
T
A
= 25°C Unless otherwise specified.
Individual Component Characteristics
Notes:
2. Indicates JEDEC registered data.
Symbol Parameter Test Conditions Device Min. Typ. Max. Unit
EMITTER
V
F
Input Forward Voltage
(2)
I
F
= 10 mA
4NXXM 1.2 1.5 V
H11B1M,
TIL113M
0.8 1.2 1.5
V
I
R
Reverse Leakage Current
(2)
V
R
= 3.0 V 4NXXM 0.001 100 µA
V
R
= 6.0 V
H11B1M,
TIL113M
0.001 10 µA
C Capacitance
(2)
V
F
= 0V, f = 1.0 MHz All 150 pF
DETECTOR
BV
CEO
Collector-Emitter Breakdown
Voltage
(2)
I
C
= 1.0 mA, I
B
= 0
4NXXM,
TIL113M
30 60 V
H11B1M 25 60 V
BV
CBO
Collector-Base Breakdown
Voltage
(2)
I
C
= 100 µA, I
E
= 0 All 30 100 V
BV
ECO
Emitter-Collector Breakdown
Voltage
(2)
I
E
= 100 µA, I
B
= 0
4NXXM 5.0 10 V
H11B1M,
TIL113M
710 V
I
CEO
Collector-Emitter Dark
Current
(2)
V
CE
= 10 V, Base Open All 1 100 nA