Data Sheet

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.4 5
Electrical Characteristics
(Continued)
T
A
= 25°C Unless otherwise specified.
Transfer Characteristics
Notes:
3. Indicates JEDEC registered data.
4. The current transfer ratio(I
C
/ I
F
) is the ratio of the detector collector current to the LED input current.
5. Pulse test: pulse width = 300 µs, duty cycle ≤ 2.0% .
6. I
F
adjusted to I
C
= 2.0 mA and I
C
= 0.7 mA rms.
7. The frequency at which I
C
is 3 dB down from the 1 kHz value.
Isolation Characteristics
Symbol Parameter Test Conditions Device Min. Typ. Max. Unit
DC CHARACTERISTICS
I
C(CTR)
Collector Output
Current
(3)(4)(5)
I
F
= 10 mA, V
CE
= 10 V,
I
B
= 0
4N32M,
4N33M
50 (500) mA (%)
4N29M,
4N30M
10 (100) mA (%)
I
F
= 1 mA, V
CE
= 5 V H11B1M 5 (500) mA (%)
I
F
= 10 mA, V
CE
= 1 V TIL113M 30 (300) mA (%)
V
CE(SAT)
Saturation Voltage
(3)(5)
I
F
= 8 mA, I
C
= 2.0 mA
4NXXM 1.0 V
TIL113M 1.25 V
I
F
= 1 mA, I
C
= 1 mA H11B1M 1.0 V
AC CHARACTERISTICS
t
on
Turn-on Time
I
F
= 200 mA, I
C
= 50 mA,
V
CC
= 10 V, R
L
= 100 Ω
4NXXM,
TIL113M
5.0 µs
I
F
= 10 mA, V
CE
= 10 V,
R
L
= 100 Ω
H11B1M 25
µs
t
off
Turn-off Time
I
F
= 200 mA, I
C
= 50 mA,
V
CC
= 10 V, R
L
= 100 Ω
4N32M,
4N33M,
TIL113M
100 µs
4N29M,
4N30M
40 µs
I
F
= 10 mA, V
CE
= 10 V,
R
L
= 100 Ω
H11B1M 18 µs
BW
Bandwidth
(6)(7)
30 kHz
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
V
ISO
Input-Output Isolation Voltage t = 1 Minute 4170 VAC
RMS
C
ISO
Isolation Capacitance V
I-O
= 0 V, f = 1 MHz 0.2 pF
R
ISO
Isolation Resistance V
I-O
= ±500 VDC, T
A
= 25°C 10
11
Ω