Datasheet

ManualsBrandsON Semiconductor ManualsDiscrete SemiconductorsSmall Signal Transistor, SOT-23, NPN, 45V

July, 2014 − Rev. 14

1 Publication Order Number:

BC817−16LT1/D

BC817-16L, SBC817-16L,

BC817-25L, SBC817-25L,

BC817-40L, SBC817-40L

General Purpose

Transistors

NPN Silicon

Features

• S and NSV Prefixes for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage V

CEO

45 V

Collector − Base Voltage V

CBO

50 V

Emitter − Base Voltage V

EBO

5.0 V

Collector Current − Continuous I

500 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1) T

= 25°C

Derate above 25°C

225

1.8

mW/°C

Thermal Resistance,

Junction−to−Ambient

556 °C/W

Total Device Dissipation

Alumina Substrate, (Note 2)

= 25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance,

Junction−to−Ambient

417 °C/W

Junction and Storage Temperature T

, T

stg

−65 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

COLLECTOR

BASE

EMITTER

SOT−23

CASE 318

STYLE 6

6x M G

6x = Device Code

x = A, B, or C

M = Date Code*

G = Pb−Free Package

MARKING DIAGRAM

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Summary of content (10 pages)

PAGE 1
BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors http://onsemi.
PAGE 2
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO 45 − − V Collector −Emitter Breakdown Voltage (VEB = 0, IC = 10 mA) V(BR)CES 50 − − V Emitter −Base Breakdown Voltage (IE = 1.0 mA) V(BR)EBO 5.0 − − V Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) ICBO − − − − 100 5.
PAGE 3
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L 300 1 hFE, DC CURRENT GAIN 200 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 150°C 25°C −55°C 100 150°C 25°C −55°C 0.1 0.01 0 0.001 0.01 0.001 1 0.1 0.1 1 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 0.
PAGE 4
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.0 TJ = 25°C 0.8 0.6 0.4 IC = 10 mA 100 mA 300 mA 500 mA 0.2 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 +1 qVC for VCE(sat) 0 -1 qVB for VBE -2 100 1 Figure 5. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) Figure 6. Temperature Coefficients 100 C, CAPACITANCE (pF) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L Cib 10 Cob 1 0.
PAGE 5
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L TYPICAL CHARACTERISTICS − BC817−25L, SBC817−25L 500 1 hFE, DC CURRENT GAIN 150°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 400 300 25°C 200 −55°C 100 0 150°C 25°C 0.1 −55°C 0.01 0.001 0.01 1 0.1 0.001 0.1 1 IC, COLLECTOR CURRENT (A) Figure 8. DC Current Gain vs. Collector Current Figure 9. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 0.
PAGE 6
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.0 TJ = 25°C 0.8 0.6 0.4 IC = 10 mA 100 mA 300 mA 500 mA 0.2 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 +1 qVC for VCE(sat) 0 -1 qVB for VBE -2 100 1 Figure 13. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) Figure 14. Temperature Coefficients 100 C, CAPACITANCE (pF) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS − BC817−25L, SBC81725L Cib 10 Cob 1 0.
PAGE 7
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L TYPICAL CHARACTERISTICS − BC817−40L, SBC817−40L 1 700 150°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 600 VCE = 1 V 500 25°C 400 300 −55°C 200 100 150°C 25°C 0.1 −55°C 0.01 0.001 0 0.001 0.01 0.001 1 0.1 0.1 1 IC, COLLECTOR CURRENT (A) Figure 16. DC Current Gain vs. Collector Current Figure 17. Collector Emitter Saturation Voltage vs.
PAGE 8
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.0 TJ = 25°C 0.8 0.6 0.4 IC = 10 mA 100 mA 300 mA 500 mA 0.2 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 +1 qVC for VCE(sat) 0 -1 qVB for VBE -2 100 1 Figure 21. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) Figure 22. Temperature Coefficients 100 C, CAPACITANCE (pF) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS − BC817−40L, SBC817−40L Cib 10 Cob 1 0.
PAGE 9
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L 1 1 ms 10 ms 100 ms 1s Thermal Limit IC (A) 0.1 0.01 Single Pulse Test @ TA = 25°C 0.001 0.01 0.1 1 VCE (Vdc) 10 Figure 24. Safe Operating Area http://onsemi.
PAGE 10
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.