Datasheet

ManualsBrandsON Semiconductor ManualsDiscrete SemiconductorsSmall Signal Transistor, SOT-23, NPN, 30V

April, 2015 − Rev. 12

1 Publication Order Number:

BC846AWT1/D

BC846, BC847, BC848

General Purpose

Transistors

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SC−70/SOT−323 which is

designed for low power surface mount applications.

Features

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage

BC846

BC847

BC848

CEO

Collector-Base Voltage

BC846

BC847

BC848

CBO

Emitter-Base Voltage

BC846

BC847

BC848

EBO

6.0

5.0

Collector Current − Continuous I

100 mAdc

Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1) T

= 25°C P

200 mW

Thermal Resistance,

Junction−to−Ambient

620 °C/W

Junction and Storage Temperature T

, T

stg

−55 to

+150

°C

1. FR−5 = 1.0 x 0.75 x 0.062 in.

www.onsemi.com

SC−70/SOT−323

CASE 419

STYLE 3

MARKING DIAGRAM

XX = Specific Device Code

M = Month Code

G = Pb−Free Package

(Note: Microdot may be in either location)

XX MG

COLLECTOR

BASE

EMITTER

See detailed ordering, marking and shipping information in the

package dimensions section on page 12 of this data sheet.

ORDERING INFORMATION

Summary of content (13 pages)

PAGE 1
BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications. www.onsemi.
PAGE 2
BC846, BC847, BC848 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA) BC846 Series BC847 Series BC848 Series V(BR)CEO 65 45 30 − − − − − − V Collector −Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) BC846 Series BC847 Series BC848 Series V(BR)CES 80 50 30 − − − − − − V Collector −Base Breakdown Voltage (IC = 10 mA) BC846 Series BC847 Series BC848 Series V(BR)CBO 80
PAGE 3
BC846, BC847, BC848 BC846A, BC847A, BC848A 300 300 VCE = 1 V 200 25°C −55°C 100 VCE = 5 V 150°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 150°C 0 200 25°C 100 −55°C 0 0.001 0.01 0.1 1 0.001 0.01 1 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain vs. Collector Current Figure 2. DC Current Gain vs. Collector Current VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.18 0.16 IC/IB = 20 150°C 0.14 0.12 25°C 0.10 0.08 0.06 −55°C 0.04 0.02 0 0.
PAGE 4
BC846, BC847, BC848 BC846A, BC847A, BC848A 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 10 C, CAPACITANCE (pF) 5.0 TA = 25°C Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 20 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 7.
PAGE 5
BC846, BC847, BC848 BC846B 600 VCE = 1 V 150°C 500 400 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 600 25°C 300 −55°C 200 100 0 VCE = 5 V 150°C 500 400 25°C 300 200 −55°C 100 0 0.001 0.01 0.1 1 0.001 0.01 1 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. DC Current Gain vs. Collector Current Figure 11. DC Current Gain vs. Collector Current VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.30 IC/IB = 20 150°C 0.25 0.20 25°C 0.15 0.10 −55°C 0.05 0 0.0001 0.
PAGE 6
BC846, BC847, BC848 2.0 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) BC846B TA = 25°C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 1.4 1.8 qVB for VBE 2.6 3.0 20 0.2 Figure 15. Collector Saturation Region f , T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TA = 25°C 20 Cib 10 6.0 2.0 Cob 0.1 0.2 1.0 2.0 10 20 0.5 5.0 VR, REVERSE VOLTAGE (VOLTS) 50 0.
PAGE 7
BC846, BC847, BC848 BC847B, BC848B 600 VCE = 1 V 150°C 500 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 600 400 25°C 300 −55°C 200 100 0 VCE = 5 V 150°C 500 400 25°C 300 200 −55°C 100 0 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 19. DC Current Gain vs. Collector Current Figure 20. DC Current Gain vs. Collector Current VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.30 IC/IB = 20 0.25 150°C 0.20 25°C 0.15 0.10 −55°C 0.05 0 0.
PAGE 8
BC846, BC847, BC848 BC847B, BC848B 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 10 C, CAPACITANCE (pF) 5.0 TA = 25°C Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 20 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 25.
PAGE 9
BC846, BC847, BC848 BC847C, BC848C 1000 1000 150°C VCE = 1 V 700 25°C 600 VCE = 5 V 900 150°C 800 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 900 500 400 −55°C 300 200 100 800 700 600 25°C 500 400 −55°C 300 200 100 0 0 0.001 0.01 1 0.1 0.001 0.01 1 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 28. DC Current Gain vs. Collector Current Figure 29. DC Current Gain vs. Collector Current VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.30 IC/IB = 20 0.
PAGE 10
BC846, BC847, BC848 BC847C, BC848C 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 10 C, CAPACITANCE (pF) 5.0 TA = 25°C Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 20 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 34.
PAGE 11
BC846, BC847, BC848 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 1 100 mS 10 mS 1 mS 1S 0.1 Thermal Limit 0.01 100 mS 10 mS 1 mS 0.1 1S Thermal Limit 0.01 0.001 0.001 1 10 0.1 100 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 37. Safe Operating Area for BC846A, BC846B Figure 38. Safe Operating Area for BC847A, BC847B, BC847C IC, COLLECTOR CURRENT (A) 1 100 mS 10 mS 1 mS 1S 0.1 Thermal Limit 0.01 0.001 0.
PAGE 12
BC846, BC847, BC848 DEVICE ORDERING AND SPECIFIC MARKING INFORMATION Device Specific Marking Code Package Shipping† BC846BWT1G 1B 3,000 / Tape & Reel 1E 3,000 / Tape & Reel 1F 3,000 / Tape & Reel SBC846BWT1G* BC847AWT1G SBC847AWT1G* BC847BWT1G SBC847BWT1G* SC−70 (SOT−323) (Pb−Free) BC847CWT1G SBC847CWT1G* 1G 3,000 / Tape & Reel BC847CWT3G SBC847CWT3G* 1G 10,000 / Tape & Reel BC848BWT1G NSVBC848BWT1G* BC848CWT1G 1K 3,000 / Tape & Reel 1L †For information on tape and reel specifications, i
PAGE 13
BC846, BC847, BC848 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.