Datasheet

ManualsBrandsON Semiconductor ManualsDiscrete SemiconductorsPower Transistor, TO-225, NPN, 45V

 Semiconductor Components Industries, LLC, 2005

April, 2005 − Rev. 12

1 Publication Order Number:

BD135/D

BD135, BD137, BD139

Plastic Medium Power

Silicon NPN Transistor

This series of plastic, medium−power silicon NPN transistors are

designed for use as audio amplifiers and drivers utilizing

complementary or quasi complementary circuits.

Features

• Pb−Free Packages are Available

• DC Current Gain − h

= 40 (Min) @ I

= 0.15 Adc

• BD 135, 137, 139 are complementary with BD 136, 138, 140

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage BD135

BD137

BD139

CEO

Vdc

Collector−Base Voltage BD135

BD137

BD139

CBO

100

Vdc

Emitter−Base Voltage V

EBO

5.0 Vdc

Collector Current I

1.5 Adc

Base Current I

0.5 Adc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

1.25

Watts

mW/°C

Total Device Dissipation @ T

= 25°C

Derate above 25°C

12.5

100

Watts

mW/°C

Operating and Storage Junction

Temperature Range

, T

stg

–55 to

+150

°C

Maximum ratings are those values beyond which device damage can oc-

cur. Maximum ratings applied to the device are individual stress limit values

(not normal operating conditions) and are not valid simultaneously. If these

limits are exceeded, device functional operation is not implied, damage

may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Case



10 °C/W

Thermal Resistance,

Junction−to−Ambient



100 °C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

Device Package Shipping

†

BD135 TO−225AA 500 Units/Box

1.5 A POWER TRANSISTORS

NPN SILICON

45, 60, 80 V, 12.5 W

xx = 35, 37, 39

Y = Year

WW = Work Week

BD139 TO−225AA 500 Units/Box

BD139G

TO−225AA

(Pb−Free)

500 Units/Box

TO−225AA

CASE 77

STYLE 1

MARKING DIAGRAM

YWW

BD1xx

BD137 TO−225AA 500 Units/Box

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

BD135G TO−225AA

(Pb−Free)

500 Units/Box

BD137G TO−225AA

(Pb−Free)

500 Units/Box

Summary of content (4 pages)

PAGE 1
BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features • Pb−Free Packages are Available • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, 140 1.5 A POWER TRANSISTORS NPN SILICON 45, 60, 80 V, 12.
PAGE 2
BD135, BD137, BD139 ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) Characteristic Symbol Collector−Emitter Sustaining Voltage* (IC = 0.03 Adc, IB = 0) BVCEO* Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TC = 125 C) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO DC Current Gain (IC = 0.005 A, VCE = 2 V) (IC = 0.15 A, VCE = 2 V) (IC = 0.5 A VCE = 2 V) hFE* Type Min Max BD 135 BD 137 BD 139 45 60 80 − − − − − 0.
PAGE 3
BD135, BD137, BD139 PACKAGE DIMENSIONS TO−225AA CASE 77−09 ISSUE Z −B− U F Q −A− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. C M 1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.
PAGE 4
BD135, BD137, BD139 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein.