Data Sheet

BD136 / BD138 / BD140 — PNP Epitaxial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
BD136 / BD138 / BD140 Rev. 2.2 2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Note:
1. Pulse test: pulse width = 350 μs, duty cycle = 2.0% pulsed.
h
FE
Classification
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage
BD136 -45
VBD138 -60
BD140 -80
V
CEO
Collector-Emitter Voltage
BD136 -45
VBD138 -60
BD140 -80
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current (DC) -1.5 A
I
C
Collector Current (Pulse) -3.0 A
I
B
Base Current -0.5 A
P
C
Collector Dissipation
T
C
= 25°C 12.5
W
T
A
= 25°C 1.25
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 to +150 °C
Symbol Parameter Conditions Min. Typ. Max. Unit
V
CEO
(sus)
Collector-Emitter Sustaining
Voltage
(1)
BD136
I
C
= -30 mA, I
B
= 0
-45
VBD138 -60
BD140 -80
I
CBO
Collector Cut-Off Current V
CB
= -30 V, I
E
= 0 -0.1 μA
I
EBO
Emitter Cut-Off Current V
EB
= -5 V, I
C
= 0 -10 μA
h
FE1
DC Current Gain
(1)
V
CE
= -2 V, I
C
= -5 mA 25
h
FE2
DC Current Gain
(1)
V
CE
= -2 V, I
C
= -0.5 A 25
h
FE3
DC Current Gain
(1)
V
CE
= -2 V, I
C
= -150 mA 40 250
V
CE
(sat) Collector-Emitter Saturation Voltage
(1)
I
C
= -500 mA, I
B
= -50 mA -0.5 V
V
BE
(on) Base-Emitter On Voltage
(1)
V
CE
= -2 V, I
C
= -0.5 A -1 V
Classification 10 16
h
FE3
63 ~ 160 100 ~ 250