Data Sheet

BD136 / BD138 / BD140 — PNP Epitaxial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
BD136 / BD138 / BD140 Rev. 2.2 3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area
Figure 5. Power Derating
-10 -100 -1000
0
10
20
30
40
50
60
70
80
90
100
V
CE
= -2V
h
FE
, DC CURRENT GAIN
I
C
[mA], COLLECTOR CURRENT
-1E-3 -0.01 -0.1 -1 -10
-0
-50
-100
-150
-200
-250
-300
-350
-400
-450
-500
I
C
=
1
0
I
B
I
C
=
2
0
I
B
V
CE
(sat)[mV], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
-1E-3 -0.01 -0.1 -1 -10
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-1.1
V
B
E
(
o
n
)
V
C
E
=
-
5
V
V
B
E
(
s
a
t
)
I
C
=
1
0
I
B
V
BE
[V], BASE-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
-1 -10 -100
-0.01
-0.1
-1
-10
BD140
BD138
BD136
10us
1
0
0
u
s
1
m
s
D
C
I
C
MAX. (Pulsed)
I
C
MAX. (Continuous)
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
P
C
[W], POWER DISSIPATION
T
C
[
o
C], CASE TEMPERATURE