Datasheet

   
4
Motorola Bipolar Power Transistor Device Data
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOL
TS)
500
0.06
Figure 8. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
5.0
0.1 0.2 0.3 0.4 0.6 1.0 2.0 6.0
100
50
30
10
2.0
0.06
Figure 9. Collector Saturation Region
I
C
, COLLECTOR CURRENT (AMPS)
0.2 0.3 0.6 2.0 3.0 4.0 6.0
0.8
0.4
0
T
J
= 25 ° C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V, VOLTAGE (VOLTS)
2.0
10
Figure 10. “On” Voltages
I
B
, BASE CURRENT (mA)
0
20 30 50 100 200 300 500 1000
1.6
1.2
0.8
0.4
I
C
= 1.0 A
T
J
= 25 ° C
2.5 A 5.0 A
300
70
h
FE
, DC CURRENT GAIN
T
J
= 150 ° C
25 ° C
–55 ° C
V
CE
= 2.0 V
+2.5
0.06
Figure 11. Temperature Coefficients
I
C
, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 1.0 3.0 0.4 0.6
V
, TEMPERATURE COEFFICIENTS (mV/ C)
°θ
+2.0
+1.5
+0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
θ
VB
FOR V
BE
* θ
VC
FOR V
CE(sat)
*APPLIES FOR I
C
/I
B
≤ 5.0
10
3
Figure 12. Collector Cut-Off Region
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
10
2
10
1
10
0
10
–1
, COLLECTOR CURRENT ( A)
µ
I
C
10
–2
10
–3
–0.3 – 0.2 –0.1 0 +0.1 +0.2 +0.3 +0.4 + 0.5 + 0.6
V
CE
= 30 V
T
J
= 150 ° C
100 ° C
REVERSE FORWARD
I
C
= I
CES
10
M
Figure 13. Effects of Base–Emitter Resistance
T
J
, JUNCTION TEMPERATURE ( ° C)
20 40 60 80 100 120 140 160
1.0
M
100
k
R
BE
, EXTERNAL BASE–EMITTER RESISTANCE (OHMS)
V
CE
= 30 V
I
C
= 10 x I
CES
I
C
≈ I
CES
(TYPICAL I
CES
VALUES
OBTAINED FROM FIGURE 12)
7.0
0.1 1.00.4
1.6
1.2
V
BE
@ V
CE
= 4.0 V
+1.0
2.00.1
I
C
= 2 x I
CES
200
20
4.0
+ 25
° C to + 150 ° C
– 55 ° C to + 25 ° C
+ 25 ° C to + 150 ° C
– 55 ° C to + 25 ° C
25 ° C
+0.7
10
k
1.0
k
0.1
k