Datasheet

Plastic Medium-Power
Silicon NPN Darlingtons
. . . for use as output devices in complementary general–purpose
amplifier applications.
• High DC Current Gain —
h
FE
= 750 (Min) @ I
C
= 1.5 and 2.0 Adc
• Monolithic Construction
• BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with
BD676, 676A, 678, 678A, 680, 680A, 682
• BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
MAXIMUM RATINGS
Rating
Symbo
l
BD675
BD675
A
BD677
BD677
A
BD679
BD679
A
BD68
1
Unit
Collector–Emitter Voltage V
CEO
45 60 80 100 Vdc
Collector–Base Voltage V
CB
45 60 80 100 Vdc
Emitter–Base Voltage V
EB
5.0 Vdc
Collector Current I
C
4.0 Adc
Base Current I
B
0.1 Adc
Total Device Dissipation
@T
C
= 25C
Derate above 25C
P
D
40
0.32
Watts
W/C
Operating and Storage
Junction
Temperating Range
T
J
, T
stg
–55 to +150 C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case θ
JC
3.13 C/W
50
40
10
5.0
0
15 30 45 60 75 105 135 150 165
Figure 1. Power Temperature Derating
T
C
, CASE TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
12090
45
20
15
30
25
35
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor

 Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev.10
1 Publication Order Number:
BD675/D
BD675
BD675A
BD677
BD677A
BD679
BD679A
BD681
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS
40 WATTS
*ON Semiconductor Preferred Device
CASE 77–09
TO–225AA TYPE
*
3
2
1
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE