Datasheet

BD675 BD675A BD677 BD677A BD679 BD679A BD681
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2
ELECTRICAL CHARACTERISTICS (T
C
= 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
BD675, 675A
(I
C
= 50 mAdc, I
B
= 0) BD677, 677A
BD679, 679A
BD681
BV
CEO
45
60
80
100
—
—
—
—
Vdc
Collector Cutoff Current (V
CE
= Half Rated V
CEO
, I
B
= 0) I
CEO
— 500 µAdc
Collector Cutoff Current
(V
CB
= Rated BV
CEO
, I
E
= 0)
(V
CB
= Rated BV
CEO
, I
E
= 0, T
C
= 100’C)
I
CBO
—
—
0.2
2.0
mAdc
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0) I
EBO
— 2.0 mAdc
ON CHARACTERISTICS
DC Currert Gain
(1)
(I
C
= 1.5 Adc,V
CE
= 3.0 Vdc) BD675, 677, 679, 681
(I
C
= 2.0 Adc, V
CE
= 3.0 Vdc) BD675A, 677A, 679A
h
FE
750
750
—
—
—
Collector–Emitter Saturation Voltage
(1)
(I
C
= 1.5 Adc, I
B
= 30 mAdc) BD677, 679, 681
(I
C
= 2.0 Adc, I
B
= 40 mAdc) BD675A, 677A, 679A
V
CE(sat)
—
—
2.5
2.8
Vdc
Base–Emitter On Voltage
(1)
(I
C
= 1.5 Adc, V
CE
= 3.0 Vdc) BD677, 679, 681
(I
C
= 2.0 Adc, V
CE
= 3 0 Vdc) BD675A, 677A, 679A
V
BE(on)
—
—
2.5
2.5
Vdc
DYNAMIC CHARACTERISTICS
Small Signal Current Gain (I
C
= 1.5 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz) h
fe
1.0 — —
(1) Pulse Test: Pulse Width  300 µs, Duty Cycle  2.0%.
Figure 2. DC Safe Operating Area
5.0
1.0
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
1.0
0.5
0.05
2.0 5.0 10 50 10
0
BONDING WIRE LIMIT
THERMALLY LIMIT at T
C
= 25°C
SECONDARY BREAKDOWN LIMIT
0.2
0.1
I
C
, COLLECTOR CURRENT (AMP)
T
C
= 25°C
BD675, 675A
BD677, 677A
BD679, 679A
BD681
20
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
– V
CE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.