Datasheet

© Semiconductor Components Industries, LLC, 2012
October, 2012 Rev. 6
1 Publication Order Number:
BD809/D
BD809 (NPN), BD810 (PNP)
Plastic High Power
Silicon Transistor
These devices are designed for use in high power audio amplifiers
utilizing complementary or quasi complementary circuits.
Features
DC Current Gain h
FE
= 30 (Min) @ I
C
= 2.0 Adc
PbFree Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage V
CEO
80 Vdc
CollectorBase Voltage V
CBO
80 Vdc
EmitterBase Voltage V
EBO
5.0 Vdc
Collector Current I
C
10 Adc
Base Current I
B
6.0 Adc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
90
0.72
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150 °C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, JunctiontoCase
q
JC
1.39 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
10 AMPERE
POWER TRANSISTORS
80 VOLTS
90 WATTS
TO220AB
CASE 221A09
STYLE 1
1
http://onsemi.com
MARKING DIAGRAM
BD8xx = Device Code
x = 09 or 10
A = Assembly Location
Y = Year
WW = Work Week
G=PbFree Package
2
3
BD8xxG
AY WW
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION

Summary of content (5 pages)