Datasheet

BD809 (NPN), BD810 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 0.1 Adc, I
B
= 0)
BV
CEO
80
−
−
Vdc
Collector Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0)
I
CBO
− 1.0
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
− 2.0 mAdc
DC Current Gain
(I
C
= 2.0 A, V
CE
= 2.0 V)
(I
C
= 4.0 A, V
CE
= 2.0 V)
h
FE
30
15
−
−
Collector−Emitter Saturation Voltage (Note 1)
(I
C
= 3.0 Adc, I
B
= 0.3 Adc)
V
CE(sat)
− 1.1 Vdc
Base−Emitter On Voltage (Note 1)
(I
C
= 4.0 Adc, V
CE
= 2.0 Vdc)
V
BE(on)
− 1.6 Vdc
Current−Gain Bandwidth Product
(I
C
= 1.0 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
f
T
1.5 − MHz
1. Pulse Test: Pulse Width x 300 ms, Duty Cycle x 2.0%.
Figure 1. Active Region DC Safe Operating Area
(see Note 1)
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
3
1
0.1
3 10 30 100
0.3
I
C
, COLLECTOR CURRENT (AMP)
dc
5 ms
1
1 ms
.5 ms
1 ms
90
80
0
0 25 50 100 125 150 175
Figure 2. Power−Temperature Derating Curve
T
C
, CASE TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
75
10
70
60
50
40
30
20