Data Sheet

ManualsBrandsON Semiconductor ManualsActive ComponentsTransistor (BJT) - Discrete TO 220AB No. of channels 1 PNP - Darlington

Darlington Complementary

Silicon Power Transistors

...designed for general purpose and low speed switching

applications.

• High DC Current Gain —

= 2500 (typ.) at I

= 4.0

• Collector–Emitter Sustaining Voltage at 100 mAdc

CEO(sus)

= 80 Vdc (min.) — BDX33B, 34B

CEO(sus)

=100 Vdc (min.) — BDX33C, 34C

• Low Collector–Emitter Saturation Voltage

CE(sat)

= 2.5 Vdc (max.) at I

= 3.0 Adc — BDX33B, 33C/34B,

34C

• Monolithic Construction with Build–In Base–Emitter Shunt resistors

• TO–220AB Compact Package

MAXIMUM RATINGS

Rating Symbol

BDX33B

BDX34B

BDX33C

BDX34C

Unit

Collector–Emitter Voltage V

CEO

80 100 Vdc

Collector–Base Voltage V

80 100 Vdc

Emitter–Base Voltage V

5.0 Vdc

Collector Current — Continuous

Peak

Adc

Base Current I

0.25 Adc

Total Device Dissipation

@ T

= 25C

Derate above 25C

0.56

Watts

W/C

Operating and Storage Junction

Temperature Range

, T

stg

–65 to +150 C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

1.78 C/W

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2001

January, 2001 – Rev. 8

1 Publication Order Number:

BDX33B/D

BDX33B

BDX33C

BDX34B

BDX34C

DARLINGTON

10 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

80–100 VOLTS

70 WATTS

*ON Semiconductor Preferred Device

CASE 221A–06

TO–220AB

NPN

PNP

Summary of content (8 pages)

PAGE 1
NPN Darlington Complementary Silicon Power Transistors BDX33B BDX33C* . . . designed for general purpose and low speed switching applications. PNP BDX34B * BDX34C • High DC Current Gain — hFE = 2500 (typ.) at IC = 4.0 • Collector–Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) — BDX33B, 34B *ON Semiconductor Preferred Device VCEO(sus) =100 Vdc (min.) — BDX33C, 34C • Low Collector–Emitter Saturation Voltage • • VCE(sat) = 2.5 Vdc (max.) at IC = 3.
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BDX33B BDX33C BDX34B BDX34C PD, POWER DISSIPATION (WATTS) 80 60 40 20 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.
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BDX33B BDX33C BDX34B BDX34C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ
PAGE 4
r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) BDX33B BDX33C BDX34B BDX34C 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 P(pk) 0.05 0.1 0.07 0.05 RθJC(t) = r(t) RθJC RθJC = 1.92°C/W 0.02 t1 0.03 0.01 0.02 0.01 0.01 0.02 0.03 SINGLE PULSE SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RθJC(t) 50 100 200 300 500 1000 Figure 1.
PAGE 5
BDX33B BDX33C BDX34B BDX34C 300 TJ = 25°C 5000 3000 2000 200 C, CAPACITANCE (pF) hFE, SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TJ = 25°C VCE = 4.0 Vdc IC = 3.0 Adc 100 50 30 20 10 2.0 5.0 Cib 70 50 PNP NPN 1.0 Cob 100 10 20 50 100 f, FREQUENCY (kHz) 200 30 0.1 500 1000 PNP NPN 0.2 1.0 2.0 5.0 10 20 0.5 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance Figure 3. Small–Signal Current Gain http://onsemi.
PAGE 6
BDX33B BDX33C BDX34B BDX34C NPN BDX33B, 33C PNP BDX34B, 34C 20,000 TJ = 150°C 5000 3000 2000 25°C 1000 - 55°C 5000 2000 300 200 300 200 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 25°C 1000 500 0.2 TJ = 150°C 3000 500 0.1 VCE = 4.0 V 10,000 hFE, DC CURRENT GAIN 10,000 hFE, DC CURRENT GAIN 20,000 VCE = 4.0 V 5.0 7.0 10 - 55°C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 0.1 5.0 7.0 10 3.
PAGE 7
BDX33B BDX33C BDX34B BDX34C PACKAGE DIMENSIONS CASE 221A–06 TO–220AB ISSUE Y –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.
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BDX33B BDX33C BDX34B BDX34C ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein.