Datasheet

ManualsBrandsON Semiconductor ManualsDiscrete SemiconductorsDarlington Transistor, TO-220, NPN, 80V

February, 2006 − Rev. 12

1 Publication Order Number:

BDX53B/D

BDX53B, BDX53C (NPN),

BDX54B, BDX54C (PNP)

Plastic Medium−Power

Complementary Silicon

Transistors

These devices are designed for general−purpose amplifier and

low−speed switching applications.

Features

• High DC Current Gain −

= 2500 (Typ) @ I

= 4.0 Adc

• Collector Emitter Sustaining Voltage − @ 100 mAdc

CEO(sus)

= 80 Vdc (Min) − BDX53B, 54B

CEO(sus)

= 100 Vdc (Min) − BDX53C, 54C

• Low Collector−Emitter Saturation Voltage −

CE(sat)

= 2.0 Vdc (Max) @ I

= 3.0 Adc

CE(sat)

= 4.0 Vdc (Max) @ I

= 5.0 Adc

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

• Pb−Free Packages are Available*

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Symbol

ÎÎÎÎ

Value

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Voltage

BDX53B, BDX54B

BDX53C, BDX54C

ÎÎÎ

CEO

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Base Voltage

BDX53B, BDX54B

BDX53C, BDX54C

ÎÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter−Base Voltage

ÎÎÎ

ÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current − Continuous

− Peak

ÎÎÎ

ÎÎÎÎ

8.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎ

ÎÎÎÎ

0.2

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ T

= 25°C

Derate above 25°C

ÎÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

0.48

ÎÎÎ

W/°C

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎ

, T

stg

ÎÎÎÎ

−65 to +150

ÎÎÎ

°C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎ

Symbol

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction−to−Ambient

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

°C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction−to−Case

ÎÎÎ

ÎÎÎÎ

1.92

ÎÎÎ

°C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

DARLINGTON

8 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

80−100 VOLTS, 65 WATTS

TO−220AB

CASE 221A

STYLE 1

MARKING DIAGRAM

& PIN ASSIGNMENT

Base

Emitter

Collector

http://onsemi.com

BDX5xy = Device Code

x = 3 or 4

y = B or C

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

BDX5xyG

AY WW

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

Summary of content (7 pages)

PAGE 1
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium−Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • • • • hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.
PAGE 2
PD, POWER DISSIPATION (WATTS) BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) TA 4.0 TC 80 3.0 60 TC 2.0 40 1.0 20 TA 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (°C) Figure 1.
PAGE 3
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) 5.0 VCC − 30 V RC 2.0 SCOPE APPROX + 8.0 V 0 51 V1 D1 [ 8.0 k [ 120 tf 1.0 0.7 0.5 0.3 tr 0.2 + 4.0 V 25 ms −12 V tr, tf v 10 ns DUTY CYCLE = 1.0% ts 3.0 t, TIME ( s) μ RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA TUT RB V2 APPROX for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities 0.1 0.07 0.05 0.
PAGE 4
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) 300 TJ = + 25°C 5000 3000 2000 200 C, CAPACITANCE (pF) hFE , SMALL−SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TJ = 25°C VCE = 3.0 V IC = 3.0 A 100 50 30 20 10 1.0 Cob 100 Cib 70 50 PNP NPN 2.0 5.0 PNP NPN 10 20 50 100 f, FREQUENCY (kHz) 200 500 30 0.1 1000 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Small-Signal Current Gain PNP BDX54B, 54C 20,000 20,000 VCE = 4.0 V VCE = 4.
PAGE 5
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) 3.0 3.0 TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25°C 2.0 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 2.5 2.0 1.5 VBE @ VCE = 4.0 V 1.0 VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 0.5 10 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages PNP BDX54B, BDX54C + 5.0 + 4.
PAGE 6
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) NPN BDX53B BDX53C COLLECTOR PNP BDX54B BDX54C BASE COLLECTOR BASE [ 8.0 k [ 120 [ 8.0 k [ 120 EMITTER EMITTER Figure 13.
PAGE 7
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.