Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsFETsMOSFET 1 360 mW

2005 Semiconductor Components Industries, LLC.

September-2017, Rev. 3

Publication Order Number:

BSS138/D

BSS138

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

These N-Channel enhancement mode field

effect transistors are produced using ON

Semicondcutor

’s proprietary, high cell density, DMOS

technology. These products have been designed to

minimize on-state resistance while provide rugged,

reliable, and fast switching performance.These

products are particularly suited for low voltage, low

current applications such as small servo motor

control, power MOSFET gate drivers, and other

switching applications.

Features

• 0.22 A, 50 V. R

DS(ON)

= 3.5Ω @ V

= 10 V

DS(ON)

= 6.0Ω @ V

= 4.5 V

• High density cell design for extremely low R

DS(ON)

• Rugged and Reliable

• Compact industry standard SOT-23 surface mount

package

SOT-23

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 50 V

GSS

Gate-Source Voltage

±20

Drain Current – Continuous (Note 1) 0.22 A

– Pulsed 0.88

Maximum Power Dissipation (Note 1) 0.36

Derate Above 25°C

2.8

mW/°C

, T

STG

Operating and Storage Junction Temperature Range

−55 to +150 °C

Maximum Lead Temperature for Soldering

Purposes, 1/16” from Case for 10 Seconds

300

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1) 350

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

SS BSS138 7’’ 8mm 3000 units

BSS138

Summary of content (5 pages)

PAGE 1
BSS138 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using ON Semicondcutor’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA VGS = 0 V, ID = 250 µA,Referenced to 25°C VDS = 50 V, 50 V 72 VGS = 0 V VDS = 50 V, VGS = 0 V TJ = 125°C IGSS Gate–Body Leakage. On Characteristics mV/°C 0.
PAGE 3
BSS138 Typical Characteristics 1 VGS = 10V 3.4 6.0V 4.5V ID, DRAIN CURRENT (A) 0.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5V 3.0V 0.6 2.5V 0.4 0.2 2.0V 3 VGS = 2.5V 2.6 2.2 3.0V 1.8 3.5V 4.0V 4.5V 1.4 6.0V 10V 1 0.6 0 0 0.5 1 1.5 2 2.5 0 3 0.2 Figure 1. On-Region Characteristics. 0.8 1 4.1 ID = 220mA VGS = 10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.6 Figure 2.
PAGE 4
BSS138 Typical Characteristics 100 ID = 220mA VDS = 8V f = 1 MHz VGS = 0 V 25V 80 8 30V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 60 CISS 40 COSS 2 20 0 0 CRSS 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 1.8 10 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 40 50 P(pk), PEAK TRANSIENT POWER (W) 5 100µs 1 1ms 10ms 100ms 1s RDS(ON) LIMIT 0.1 DC VGS = 10V SINGLE PULSE RθJA = 350oC/W 0.01 TA = 25oC 0.001 0.
PAGE 5
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