Datasheet

BSS138LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 µAdc)
V
(BR)DSS
50 – – Vdc
Zero Gate Voltage Drain Current
(V
DS
= 25 Vdc, V
GS
= 0 Vdc)
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
I
DSS
–
–
–
–
0.1
0.5
µAdc
Gate–Source Leakage Current (V
GS
= ± 20 Vdc, V
DS
= 0 Vdc) I
GSS
– – ±0.1 µAdc
ON CHARACTERISTICS (Note 1.)
Gate–Source Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
V
GS(th)
0.5 – 1.5 Vdc
Static Drain–to–Source On–Resistance
(V
GS
= 2.75 Vdc, I
D
< 200 mAdc, T
A
= –40°C to +85°C)
(V
GS
= 5.0 Vdc, I
D
= 200 mAdc)
r
DS(on)
–
–
5.6
–
10
3.5
Ohms
Forward Transconductance
(V
DS
= 25 Vdc, I
D
= 200 mAdc, f = 1.0 kHz)
g
fs
100 – – mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1 MHz) C
iss
– 40 50 pF
Output Capacitance (V
DS
= 25 Vdc, V
GS
= 0, f = 1 MHz) C
oss
– 12 25
Transfer Capacitance (V
DG
= 25 Vdc, V
GS
= 0, f = 1 MHz) C
rss
– 3.5 5.0
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
(V
DD
=30Vdc I
D
=02Adc)
t
d(on)
– – 20
ns
Turn–Off Delay Time
(V
DD
= 30 Vdc, I
D
= 0.2 Adc,)
t
d(off)
– – 20
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.