Datasheet

ManualsBrandsON Semiconductor ManualsDiscrete SemiconductorsMOSFET P, 50 V 225 mW SOT-23

October, 2012 − Rev. 8

1 Publication Order Number:

BSS84LT1/D

BSS84L, BVSS84L

Power MOSFET

Single P-Channel SOT-23

-50 V, 10 W

• SOT−23 Surface Mount Package Saves Board Space

• AEC Q101 Qualified and PPAP Capable − BVSS84L

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

Rating Symbol Value Unit

Drain−to−Source Voltage V

DSS

50 Vdc

Gate−to−Source Voltage − Continuous V

± 20 Vdc

Drain Current

Continuous @ T

= 25°C

Pulsed Drain Current (t

≤ 10 ms)

130

520

Total Power Dissipation @ T

= 25°C P

225 mW

Operating and Storage Temperature

Range

, T

stg

− 55 to

150

°C

Thermal Resistance − Junction−to−Ambient

556 °C/W

Maximum Lead Temperature for Soldering

Purposes, for 10 seconds

260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

P−Channel

http://onsemi.com

SOT−23

CASE 318

STYLE 21

PD MG

MARKING DIAGRAM & PIN ASSIGNMENT

Drain

Gate

Source

Device Package Shipping

†

ORDERING INFORMATION

BSS84LT1G SOT−23

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

BVSS84LT1G SOT−23

(Pb−Free)

3000 / Tape & Reel

PD = Specific Device Code

M = Date Code

G = Pb−Free Package

(*Note: Microdot may be in either location)

−50 V

10 W @ 10 V

(BR)DSS

DS(ON)

MAX

Summary of content (4 pages)

PAGE 1
BSS84L, BVSS84L Power MOSFET Single P-Channel SOT-23 -50 V, 10 W • SOT−23 Surface Mount Package Saves Board Space • AEC Q101 Qualified and PPAP Capable − BVSS84L • These Devices are Pb−Free and are RoHS Compliant http://onsemi.
PAGE 2
BSS84L, BVSS84L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS −50 − − Vdc − − − − − − −0.
PAGE 3
BSS84L, BVSS84L R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS TYPICAL ELECTRICAL CHARACTERISTICS 9 VGS = -4.5 V 8 150°C 7 6 25°C 5 4 -55°C 3 2 0 0.1 0.2 0.3 0.4 0.5 0.6 7 150°C VGS = -10 V 6.5 6 5.5 5 4.5 4 25°C 3.5 3 -55°C 2.5 2 0 0.2 0.1 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VGS = -10 V ID = -0.52 A 1.4 VGS = -4.5 V ID = -0.13 A 1.2 1 0.8 -5 45 95 -8 -6 -5 -4 ID = -0.
PAGE 4
BSS84L, BVSS84L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.