Datasheet

BSS84L, BVSS84L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= −250 mAdc)
V
(BR)DSS
−50 − − Vdc
Zero Gate Voltage Drain Current
(V
DS
= −25 Vdc, V
GS
= 0 Vdc)
(V
DS
= −50 Vdc, V
GS
= 0 Vdc)
(V
DS
= −50 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
I
DSS
−
−
−
−
−
−
−0.1
−15
−60
mAdc
Gate−Body Leakage Current (V
GS
= ± 20 Vdc, V
DS
= 0 Vdc) I
GSS
− − ±10 nAdc
ON CHARACTERISTICS (Note 1)
Gate−Source Threaded Voltage (V
DS
= V
GS
, I
D
= −250 mA)
V
GS(th)
−0.9 − −2.0 Vdc
Static Drain−to−Source On−Resistance (V
GS
= −5.0 Vdc, I
D
= −100 mAdc) R
DS(on)
− 4.7 10
W
Transfer Admittance (V
DS
= −25 Vdc, I
D
= −100 mAdc, f = 1.0 kHz) |y
fs
| 50 − − mS
DYNAMIC CHARACTERISTICS
Input Capacitance
V
DS
= 5.0 Vdc C
iss
− 36 −
pF
Output Capacitance V
DS
= 5.0 Vdc C
oss
− 17 −
Transfer Capacitance V
DG
= 5.0 Vdc C
rss
− 6.5 −
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
V
DD
= −15 Vdc, I
D
= −2.5 Adc,
R
L
= 50 W
t
d(on)
− 3.6 −
ns
Rise Time t
r
− 9.7 −
Turn−Off Delay Time t
d(off)
− 12 −
Fall Time t
f
− 1.7 −
Gate Charge V
DD
= −40 Vdc, I
D
= −0.5 A,
V
GS
= −10 V
Q
T
− 2.2 − nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
I
S
− − −0.130
A
Pulsed Current I
SM
− − −0.520
Forward Voltage (Note 2) V
GS
= 0 V, I
S
= −130 mA V
SD
− − −2.2 V
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
0
0.3
0.4
0.1
0.6
0.2
Figure 1. Transfer Characteristics
1 1.5 2 2.5 3
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. On−Region Characteristics
V
DS
= 10 V
150°C
25°C
-55°C
024 10
0
0.15
0.2
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
6
0.05
8
0.3
0.1
3.5
0.5
0.25
13 957
-3.25 V
-2.75 V
-2.25 V
-2.5 V
-3.0 V
V
GS
= -3.5 V
4
0.35
0.4
0.5
0.45
T
J
= 25°C
−I
D
, DRAIN CURRENT (AMPS)
−I
D
, DRAIN CURRENT (AMPS)