Data Sheet

August 2014
FCP16N60 / FCPF16N60 — N-Channel SuperFET
®
MOSFET
©2008 Fairchild Semiconductor Corporation
FCP16N60 / FCPF16N60 Rev. C0
www.fairchildsemi.com
1
FCP16N60 / FCPF16N60
N-Channel SuperFET
®
MOSFET
600 V, 16 A, 260 mΩ
Features
• 650V @ T
J
= 150°C
•Typ. R
DS(on)
= 220 mΩ
• Ultra Low Gate Charge (Typ. Q
g
= 55 nC )
• Low Effective Output Capacitance (Typ. C
oss(eff.)
= 110 pF )
• 100% Avalanche Tested
Applications
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET
®
MOSFET is Fairchild Semiconductor’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
TO-220
G
D
S
TO-220F
G
D
S
G
S
D
Absolute Maximum Ratings
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol Parameter FCP16N60 FCPF16N60 Unit
V
DSS
Drain-Source Voltage 600 V
I
D
Drain Current - Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
16
10.1
16*
10.1*
A
A
I
DM
Drain Current - Pulsed
(Note 1)
48 48*
A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
450 mJ
I
AR
Avalanche Current
(Note 1)
16 A
E
AR
Repetitive Avalanche Energy
(Note 1)
20.8 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C)
- Derate Above 25°C
167
1.33
37.9
0.3
W
W/°C
T
J,
T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
300 °C
Symbol Parameter FCP16N60 FCPF16N60 Unit
R
θJC
Thermal Resistance, Junction-to-Case 0.75 3.3 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W