Data Sheet

FCP16N60 / FCPF16N60 — N-Channel SuperFET
®
MOSFET
©2008 Fairchild Semiconductor Corporation
FCP16N60 / FCPF16N60 Rev. C0
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics T
C
= 25
o
C unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FCP16N60 FCP16N60 TO-220 Tube N/A N/A 50 units
FCPF16N60 FCPF16N60 TO-220F Tube N/A N/A 50 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250 μA, V
GS
= 0 V, T
J
= 25
o
C 600 - - V
I
D
= 250 μA, V
GS
= 0 V, T
J
= 150
o
C- 650 - V
ΔBV
DSS
/ ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, Referenced to 25
o
C-0.6-V/
o
C
BV
DS
Drain-Source Avalanche Breakdown
Voltage
V
GS
= 0 V, I
D
= 16 A - 700 - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 600 V, V
GS
= 0 V - - 1
μA
V
DS
= 480 V, T
C
= 125
o
C--10
I
GSS
Gate to Body Leakage Current V
GS
= ±30 V, V
DS
= 0 V - - ±100 nA
V
GS(th)
Gate Threshold Voltage V
GS
= V
DS
, I
D
= 250 μA3.0-5.0V
R
DS(on)
Static Drain to Source On Resistance V
GS
= 10 V, I
D
= 8 A - 0.55 0.26 Ω
g
FS
Forward Transconductance V
DS
= 40 V, I
D
= 8 A - 11.5 - S
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
- 1730 2250 pF
C
oss
Output Capacitance - 960 1150 pF
C
rss
Reverse Transfer Capacitance - 85 - pF
C
oss
Output Capacitance V
DS
= 480 V, V
GS
= 0 V, f = 1 MHz - 45 60 pF
C
oss(eff.)
Effective Output Capacitance V
DS
= 0 V to 400 V, V
GS
= 0 V - 110 - pF
Q
g
Total Gate Charge at 10V
V
DS
= 480 V, I
D
= 16 A,
V
GS
= 10 V
(Note 4)
-5570nC
Q
gs
Gate to Source Gate Charge - 10.5 13 nC
Q
gd
Gate to Drain “Miller” Charge - 28 - nC
ESR Equivalent Series Resistance f = 1 MHz - 1.7 - Ω
t
d(on)
Turn-On Delay Time
V
DD
= 300 V, I
D
= 16 A,
V
GS
= 10 V, R
G
= 25 Ω
(Note 4)
-4285ns
t
r
Turn-On Rise Time - 130 270 ns
t
d(off)
Turn-Off Delay Time - 165 340 ns
t
f
Turn-Off Fall Time - 90 190 ns
I
S
Maximum Continuous Drain to Source Diode Forward Current - - 16 A
I
SM
Maximum Pulsed Drain to Source Diode Forward Current - - 48 A
V
SD
Drain to Source Diode Forward Voltage V
GS
= 0 V, I
SD
= 16 A - - 1.4 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
SD
= 16 A,
dI
F
/dt = 100 A/μs
- 435 - ns
Q
rr
Reverse Recovery Charge - 7.0 - μC
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: I
AS
= 8 A, V
DD
= 50 V, R
G
= 25 Ω, starting T
J
= 25°C.
3: I
SD
≤ 16 A, di/dt ≤ 200 A/μs, V
DD
≤ BV
DSS
, starting T
J
= 25°C.
4: Essentially independent of operating temperature typical characteristics.