Data Sheet

FCP16N60 / FCPF16N60 — N-Channel SuperFET
®
MOSFET
©2008 Fairchild Semiconductor Corporation
FCP16N60 / FCPF16N60 Rev. C0
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
♦ Notes :
1. 250
μS Pulse Test
2. T
C
= 25°C
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
246810
10
0
10
1
10
2
♦Note
1. V
DS
= 40V
2. 250
μs Pulse Test
-55°C
150°C
25°C
I
D
, Drain Current [A]
V
GS
, Gate-Source Voltage [V]
0 5 10 15 20 25 30 35 40 45 50
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V
GS
= 20V
V
GS
= 10V
♦ Note : T
J
= 25 °Cٛ
R
DS(ON)
[O ],
Drain-Source On-Resistance
I
D
, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
10
0
10
1
10
2
25°C
150°C
♦ Notes :
1. V
GS
= 0V
2. 250
μs Pulse Test
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain Voltage [V]
10
-1
10
0
10
1
0
1000
2000
3000
4000
5000
6000
7000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
♦ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
V
DS
, Drain-Source Voltage [V]
0 102030405060
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 480V
♦ Note : I
D
= 16A
V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]