Data Sheet

May 2014
FDA24N40F — N-Channel UniFET
TM
FRFET
®
MOSFET
©2008 Fairchild Semiconductor Corporation
FDA24N40F Rev. C2
www.fairchildsemi.com
1
FDA24N40F
N-Channel UniFET
TM
FRFET
®
MOSFET
400 V, 23 A, 190 mΩ
Features
•R
DS(on)
= 150 mΩ (Typ.) @ V
GS
= 10 V, I
D
= 11.5 A
• Low Gate Charge (Typ. 46 nC)
• Low C
rss
(Typ. 25 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFET
TM
MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery perfor-
mance of UniFET FRFET
®
MOSFET has been enhanced by
lifetime control. Its trr is less than 100nsec and the reverse dv/dt
immunity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
TO-3PN
G
D
S
G
S
D
MOSFET Maximum Ratings T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FDA24N40F Unit
V
DSS
Drain to Source Voltage 400 V
V
GSS
Gate to Source Voltage ±30 V
I
D
Drain Current
- Continuous (T
C
= 25
o
C) 23
A
- Continuous (T
C
= 100
o
C) 13.8
I
DM
Drain Current - Pulsed (Note 1) 92 A
E
AS
Single Pulsed Avalanche Energy (Note 2) 1190 mJ
I
AR
Avalanche Current (Note 1) 23 A
E
AR
Repetitive Avalanche Energy (Note 1) 23.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
Power Dissipation
(T
C
= 25
o
C) 235 W
- Derate Above 25
o
C1.8W/
o
C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150
o
C
T
L
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
300
o
C
Symbol Parameter FDA24N40F Unit
R
θJC
Thermal Resistance, Junction to Case, Max. 0.53
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient, Max. 40