Data Sheet

FDA24N40F — N-Channel UniFET
TM
FRFET
®
MOSFET
©2008 Fairchild Semiconductor Corporation
FDA24N40F Rev. C2
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics T
C
= 25
o
C unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FDA24N40F
FDA24N40F TO-3PN Tube N/A N/A 30 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 μA, V
GS
= 0 V, T
J
= 25
o
C 400 - - V
ΔBV
DSS
/ ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, Referenced to 25
o
C-0.5-V/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 400 V, V
GS
= 0 V - - 10
μA
V
DS
= 320 V, T
C
= 125
o
C - - 100
I
GSS
Gate to Body Leakage Current V
GS
= ±30 V, V
DS
= 0 V - - ±100 nA
V
GS(th)
Gate Threshold Voltage V
GS
= V
DS
, I
D
= 250 μA3.0-5.0V
R
DS(on)
Static Drain to Source On Resistance V
GS
= 10 V, I
D
= 11.5 A - 0.15 0.19 Ω
g
FS
Forward Transconductance V
DS
= 20 V, I
D
= 11.5 A - 29 - S
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
- 2280 3030 pF
C
oss
Output Capacitance - 370 490 pF
C
rss
Reverse Transfer Capacitance - 25 38 pF
Q
g(tot)
Total Gate Charge at 10V
V
DS
= 320 V, I
D
= 23 A,
V
GS
= 10 V
(Note 4)
-4660nC
Q
gs
Gate to Source Gate Charge - 13 - nC
Q
gd
Gate to Drain “Miller” Charge - 18 - nC
t
d(on)
Turn-On Delay Time
V
DS
= 200 V, I
D
= 23 A,
V
GS
= 10 V, R
G
= 25 Ω
(Note 4)
-4090ns
t
r
Turn-On Rise Time - 92 195 ns
t
d(off)
Turn-Off Delay Time - 120 250 ns
t
f
Turn-Off Fall Time - 75 160 ns
I
S
Maximum Continuous Drain to Source Diode Forward Current - - 23 A
I
SM
Maximum Pulsed Drain to Source Diode Forward Current - - 92 A
V
SD
Drain to Source Diode Forward Voltage V
GS
= 0 V, I
SD
= 23 A - - 1.5 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
SD
= 23 A,
dI
F
/dt = 100 A/μs
-110-ns
Q
rr
Reverse Recovery Charge - 0.3 - μC
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 4.5 mH, I
AS
= 23 A, V
DD
= 50 V, R
G
= 25 Ω, starting T
J
= 25
o
C.
3: I
SD
≤ 23 A, di/dt ≤ 200 A/μs, V
DD
≤ BV
DSS
, starting T
J
= 25°C.
4: Essentially independent of operating temperature typical characteristics.