Data Sheet

November 2013
FDB14N30 — N-Channel UniFET
TM
MOSFET
©2007 Fairchild Semiconductor Corporation
FDB14N30 Rev. C1
www.fairchildsemi.com
1
FDB14N30
N-Channel UniFET
TM
MOSFET
300 V, 14 A, 290 m
Features
•R
DS(on)
= 290 m (Max.) @ V
GS
= 10 V, I
D
= 7 A
• Low Gate Charge (Typ. 18 nC)
•Low C
rss
(Typ.17 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
Applications
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFET
TM
MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
G
S
D
D
2
-PAK
G
S
D
Absolute Maximum Ratings T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FDB14N30TM Unit
V
DSS
Drain-Source Voltage 300 V
I
D
Drain Current - Continuous (T
C
= 25C)
- Continuous (T
C
= 100C)
14
8.4
A
A
I
DM
Drain Current - Pulsed
(Note 1)
56 A
V
GSS
Gate-Source voltage 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
330 mJ
I
AR
Avalanche Current (Note 1) 14 A
E
AR
Repetitive Avalanche Energy (Note 1) 14 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3) 4.5 V/ns
P
D
Power Dissipation (T
C
= 25C)
- Derate above 25C
140
1.12
W
W/C
T
J,
T
STG
Operating and Storage Temperature Range -55 to +150 C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300 C
Symbol Parameter FDB14N30TM Unit
R
JC
Thermal Resistance, Junction to Case, Max 0.87
o
C/W
R
JA
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5
Thermal Resistance, Junction to Ambient (1 in
2
pad of 2 oz copper), Max. 40