Data Sheet

FDB14N30 — N-Channel UniFET
TM
MOSFET
©2007 Fairchild Semiconductor Corporation
FDB14N30 Rev. C1
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics T
C
= 25°C unless otherwise noted.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 2.8mH, I
AS
= 14A, V
DD
= 50V, R
G
= 25, Starting T
J
= 25C
3. I
SD
 14A, di/dt  200A/s, V
DD
 BV
DSS
, Starting T
J
= 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FDB14N30 FDB14N30TM D2-PAK 330mm 24mm 800 units
Symbol Parameter Conditions Min. Typ. Max Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250A 300 -- -- V
BV
DSS
/ T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250A, Referenced to 25C--0.3--V/C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 300V, V
GS
= 0V
V
DS
= 240V, T
C
= 125C
--
--
--
--
1
10
A
A
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 30V, V
DS
= 0V -- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -30V, V
DS
= 0V -- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250A3.0--5.0V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 7A -- 0.24 0.29 
g
FS
Forward Transconductance V
DS
= 40V, I
D
= 7A -- 10.5 -- S
Dynamic Characteristics
C
iss
Input Capacitance V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
-- 815 1060 pF
C
oss
Output Capacitance -- 150 195 pF
C
rss
Reverse Transfer Capacitance -- 17 25 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time V
DD
= 150V, I
D
= 14A
R
G
= 25
(Note 4)
-- 20 50 ns
t
r
Turn-On Rise Time -- 105 120 ns
t
d(off)
Turn-Off Delay Time -- 30 70 ns
t
f
Turn-Off Fall Time -- 75 160 ns
Q
g
Total Gate Charge V
DS
= 240V, I
D
= 14A
V
GS
= 10V
(Note 4)
-- 18 25 nC
Q
gs
Gate-Source Charge -- 4.5 -- nC
Q
gd
Gate-Drain Charge -- 8 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 14 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 56 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0V, I
S
= 14A -- -- 1.4 V
t
rr
Reverse Recovery Time V
GS
= 0V, I
S
= 14A
dI
F
/dt =100A/s
-- 235 -- ns
Q
rr
Reverse Recovery Charge -- 1.6 -- C