Data Sheet

January 2001
2001 Fairchild Semiconductor Corporation
FDC6312P Rev C (W)
FDC6312P
Dual P-Channel 1.8V PowerTrench



Specified MOSFET
General Description
These P-Channel 1.8V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
Applications
• Power management
• Load switch
Features
• –2.3 A, –20 V. R
DS(ON)
= 115 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 155 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 225 mΩ @ V
GS
= –1.8 V
• High performance trench technology for extremely
low R
DS(ON)
• SuperSOT
TM
-6 package: small footprint (72%
smaller than standard SO-8); low profile (1mm thick)
D1
S2
G1
D2
S1
G2
SuperSOT -6
TM
3
2
1
4
5
6
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –20 V
V
GSS
Gate-Source Voltage
±8
V
I
D
Drain Current – Continuous (Note 1a) –2.3 A
– Pulsed –7
Power Dissipation for Single Operation (Note 1a) 0.96
(Note 1b)
0.9
P
D
(Note 1c)
0.7
W
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 130
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 60
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.312 FDC6312P 13’’ 12mm 3000 units
FDC6312P