Data Sheet

FDC6312P Rev C (W)
Typical Characteristics
0
1
2
3
4
5
0123456
Q
g
, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -2.3A
V
DS
= -5V
-15V
-10V
0
100
200
300
400
500
600
700
0 5 10 15 20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 180
o
C/W
T
A
= 25
o
C
10ms
1ms
0
1
2
3
4
5
0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θ
JA
= 180°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
θJA
(t) = r(t) + R
θJA
R
θ
JA
= 180°C/W
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
P
(p
k
)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6312P