Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsFETsMOSFET 1 N-channel , P-channel

FDC6327C

Publication Order Number:

FDC6327C/D

FDC6327C

Dual N & P-Channel 2.5V Specified PowerTrench

MOSFET

General Description

These N & P-Channel 2.5V s

pecified MOSFETs are

produced using ON Semiconductor's advanced

PowerTrench process that has been especially tailored

to minimize on-state resistance and yet maintain low gate

charge for superior switching performance.

These devices have been designed to offer exceptional power

dissipation in a very small footprint for applications where

the bigger more expensive SO-8 and TSSOP-8 packages

are impractical.

Applications

• DC/DC converter

• Load switch

• Motor driving

Features

• N-Channel 2.7A, 20V. R

DS(on)

= 0.08Ω @ V

= 4.5V

DS(on)

= 0.12Ω @ V

= 2.5V

• P-Channel -1.6A, -20V.R

DS(on)

= 0.17Ω @ V

= -4.5V

DS(on)

= 0.25Ω @ V

= -2.5V

• Fast switching speed.

• Low gate charge.

• High performance trench technology for extremely

low R

DS(ON)

• SuperSOT

-6 package: small footprint (72% smaller

than SO-8); low profile (1mm thick).

1999 Semiconductor Components Industries, LLC.

October-2017, Rev. 5

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol Parameter N-Channel P-Channel Units

DSS

Drain-Source Voltage 20 -20 V

GSS

Gate-Source Voltage

Drain Current - Continuous

(Note 1a)

2.7 -1.9 A

- Pulsed 8 -8

Power Dissipation

(Note 1a)

0.96 W

(Note 1b)

0.9

(Note 1c)

0.7

, T

stg

Operating and Storage Junction Temperature Range -55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

130

C/W

Thermal Resistance, Junction-to-Case

(Note 1)

C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

.327 FDC6327C 7” 8mm 3000

SuperSOT -6

Summary of content (9 pages)

PAGE 1
FDC6327C FDC6327C Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N & P-Channel 2.5V specified MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. • • P-Channel -1.6A, -20V.RDS(on) = 0.17Ω @ VGS = -4.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BVDSS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = - 250 µA ID = 250 µA, Referenced to 25°C ID = - 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V IGSSF Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward IGSSR Gate-Body Leakage, Reverse VGS = -8 V, VDS = 0 V ∆BVDSS ∆T J I
PAGE 3
Symbol Parameter Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd (continued) TA = 25°C unless otherwise noted Test Conditions Type Min Typ N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 5 7 9 14 12 14 3 3 3.25 2.85 0.65 0.68 0.90 0.65 Max Units (Note 2) Gate-Drain Charge N-Channel VDD = 10 V, ID = 1 A, VGS = 4.
PAGE 4
FDC6327C Typical Characteristics: N-Channel 2.4 10 VGS = 4.5V 3.0V 2.5V 8 2.2 2 VGS = 2.0V 1.8 6 1.6 2.0V 4 1.4 2.5V 1.2 3.0V 2 3.5V 4.5V 1 1.5V 0.8 0 0 1 2 3 0 4 2 4 Figure 1. On-Region Characteristics. RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 8 10 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 1.6 ID = 1.3A ID = 2.7A VGS = 4.5V 1.5 0.2 1.4 1.3 0.15 1.2 o TA = 125 C 1.1 0.
PAGE 5
(continued) 500 5 VGS, GATE-SOURCE VOLTAGE (V) FDC6327C Typical Characteristics: N-Channel ID = 2.7A VDS = 5V f = 1MHz VGS = 0 V 10V 400 4 15V 3 300 2 200 1 100 0 0 CISS COSS CRSS 0 0.5 1 1.5 2 2.5 3 3.5 0 4 4 Figure 7. Gate-Charge Characteristics. 16 20 Figure 8. Capacitance Characteristics. 5 100µs RDS(ON) LIMIT 12 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 8 SINGLE PULSE o 1ms RθJA = 180 C/W 4 o TA = 25 C 10ms 1 100ms 3 1s DC 2 0.
PAGE 6
FDC6327C Typical Characteristics: P-Channel 2.4 10 VGS = -4.5V 2.2 -3.5V 8 -3.0V VGS = -2.0V 2 1.8 6 -2.5V -2.5V 1.6 4 1.4 -2.0V -3.0V -3.5V 1.2 2 -4.0V -4.5V 1 -1.5V 0 0.8 0 1 2 3 4 0 5 2 4 6 8 10 -ID, DIRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.5 1.5 ID = -1.9A VGS = -4.5V 1.4 ID = -1A 0.4 1.3 1.2 0.3 o TA = 125 C 1.1 0.2 1 0.9 o TA = 25 C 0.
PAGE 7
5 FDC6327C Typical Characteristics: P-Channel (continued) 450 VDS = -5.0V ID = -1.9A f = 1 MHz VGS = 0 V 400 -10V 4 350 -15V CISS 300 3 250 200 2 150 100 1 COSS 50 0 CRSS 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 Qg, GATE CHARGE (nC) SINGLE PULSE o RθJA = 180 C/W 4 o TA = 25 C 10ms 100ms DC 20 5 1ms 1 16 Figure 18. Capacitance Characteristics. 100µs RDS(ON) LIMIT 12 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 17. Gate-Charge Characteristics. 10 8 3 1s 2 0.1 VGS = -4.
PAGE 8
FDC6327C Typical Characteristics: N & P-Channel (continued) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.2 0.1 R θJA (t) = r(t) * R R θJA = 180°C/ 0.1 P(pk) 0.05 t1 0.05 0.02 0.01 0.0001 0.02 0.01 Single Pulse 0.001 t2 TJ - TA = P * R θJA (t) Duty Cycle, D = t 1 / t 2 0.01 0.1 t 1, TIME (sec) 1 10 Figure 21. Transient Thermal Response Curve. www.onsemi.
PAGE 9
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