Data Sheet

FDC6327C
www.onsemi.com
2
Electrical Characteristics
T
A
= 25°C unless otherwise noted
S
y
mbol Parameter Test Conditions T
yp
eMin T
yp
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 250
µ
A
V
GS
= 0 V, I
D
= - 250
µ
A
N-Ch
P-Ch
20
-20
V
∆
BV
DSS
∆
T
J
Breakdown Voltage
Temperature Coefficient
I
D
= 250
µ
A, Referenced to 25
°
C
I
D
= - 250
µ
A, Referenced to 25
°
C
N-Ch
P-Ch
12
-19
mV/
°
C
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 16 V, V
GS
= 0 V
V
DS
= -16 V, V
GS
= 0 V
N-Ch
P-Ch
1
-1
µ
A
I
GSSF
Gate-Body Leakage, Forward V
GS
= 8 V, V
DS
= 0 V All 100 nA
I
GSSR
Gate-Body Leakage, Reverse V
GS
= -8 V, V
DS
= 0 V All -100 nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250
µ
A
V
DS
= V
GS
, I
D
= -250
µ
A
N-Ch
P-Ch
0.4
-0.4
0.9
-0.9
1.5
-1.5
V
∆
V
GS(th)
∆
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
µ
A, Referenced to 25
°
C
I
D
= - 250
µ
A, Referenced to 25
°
C
N-Ch
P-Ch
-2.1
2.3
mV/
°
C
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 4.5 V, I
D
= 2.7 A
V
GS
= 4.5 V, I
D
= 2.7 A, T
J
= 125
°
C
V
GS
= 2.5 V, I
D
= 2.2 A
V
GS
= -4.5 V, I
D
= -1.6 A
V
GS
= -4.5 V, I
D
= -1.6 A, T
J
= 125
°
C
V
GS
= -2.5 V, I
D
= -1.3 A
N-Ch
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch
0.069
0.094
0.093
0.141
0.203
0.205
0.08
0.13
0.12
0.17
0.27
0.25
Ω
I
D(on)
On-State Drain Current V
GS
= 4.5 V, V
DS
= 5 V
V
GS
= -4.5 V, V
DS
= -5 V
N-Ch
P-Ch
8
-8
A
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 2.7 A
V
DS
= -5 V, I
D
= -1.9 A
N-Ch
P-Ch
7.7
4.5
S
Dynamic Characteristics
C
iss
Input Capacitance N-Ch
P-Ch
325
315
pF
C
oss
Output Capacitance N-Ch
P-Ch
75
65
pF
C
rss
Reverse Transfer Ca
p
acitance
N-Channel
V
DS
= 10 V, V
GS
= 0 V, f = 1.0 MHz
P-Channel
V
DS
= 10 V, V
GS
= 0 V, f = 1.0 MHz
N-Ch
P-Ch
35
24
pF