Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsFETsMOSFET 1 N-channel , P-channel

2001 Semiconductor Components Industries, LLC.

October-2017, Rev. 2

Publication Order Number:

FDC6333C/D

FDC6333C

30V N & P-Channel PowerTrench



MOSFETs

General Description

These N & P-Channel MOSFETs are produced using

ON Semiconductor’s advanced PowerTrench

process that has been especially tailored to minimize

on-state resistance and yet maintain superior

switching performance.

These devices have been designed to offer

exceptional power dissipation in a very small footprint

for applications where the bigger more expensive

SO-8 and TSSOP-8 packages are impractical.

Applications

• DC/DC converter

• Load switch

• LCD display inverter

Features

• Q1 2.5 A, 30V. R

DS(ON)

= 95 mΩ @ V

= 10 V

DS(ON)

= 150 mΩ @ V

= 4.5 V

• Q2 –2.0 A, 30V. R

DS(ON)

= 150 mΩ @ V

= –10 V

DS(ON)

= 220 mΩ @ V

= –4.5 V

• Low gate charge

• High performance trench technology for extremely

low R

DS(ON)

• SuperSOT –6 package: small footprint (72% smaller than

SO-8); low profile (1mm thick).

SuperSOT -6

Pin 1

SuperSOT™-6

Q1(N)

Q2(P)

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Q1 Q2 Units

DSS

Drain-Source Voltage 30 –30 V

GSS

Gate-Source Voltage ±16 ±25 V

Drain Current – Continuous (Note 1a) 2.5 –2.0 A

– Pulsed 8 –8

Power Dissipation for Single Operation (Note 1a) 0.96

(Note 1b)

0.9

(Note 1c)

0.7

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 130

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 60

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.333 FDC6333C 7’’ 8mm 3000 units

FDC6333C

Summary of content (8 pages)

PAGE 1
FDC6333C FDC6333C 30V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. • Q1 2.5 A, 30V. RDS(ON) = 95 mΩ @ VGS = 10 V RDS(ON) = 150 mΩ @ VGS = 4.5 V • Q2 –2.0 A, 30V. RDS(ON) = 150 mΩ @ VGS = –10 V RDS(ON) = 220 mΩ @ VGS = –4.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSSF Gate–Body Leakage, Forward IGSSR Gate–Body Leakage, Reverse On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = –250 µA ID = 250 µA,Ref. to 25°C ID = –250 µA,Ref.
PAGE 3
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Q1 0.8 Q2 –0.8 Q1 VGS = 0 V, IS = 0.8 A (Note 2) 0.8 1.2 Q2 VGS = 0 V, IS = 0.8 A (Note 2) 0.8 –1.2 A V Notes: 1.
PAGE 4
FDC6333C Typical Characteristics: N-Channel 10 2 VGS = 10V VGS = 3.0V 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 3.5V I D, DRAIN CURRENT (A) 8 6 3.0V 4 2 0 1.8 1.6 3.5V 1.4 4.0V 4.5V 1.2 6.0V 10V 1 0.8 0 1 2 3 0 2 4 6 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 0.25 ID = 2.5A VGS = 10V RDS(ON) , ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10 Figure 2.
PAGE 5
FDC6333C Typical Characteristics: N-Channel (continued) 400 VDS = 5V ID = 2.5A f = 1MHz VGS = 0 V 10V 8 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 300 C ISS 200 100 COSS CRSS 0 0 0 1 2 3 4 5 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 15 20 25 30 Figure 8. Capacitance Characteristics.
PAGE 6
FDC6333C Typical Characteristics: P-Channel 10 -6.0V 8 -ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3 VGS = -10V -4.5V 6 -4.0V 4 -3.5V 2 VGS = -3.5V 2.5 2 -4.0V -4.5V -5.0V 1.5 -6.0V -10V 1 0.5 0 0 1 2 3 4 0 5 2 4 Figure 11. On-Region Characteristics. 10 0.4 I D = -2A VGS =-10V RDS(ON), ON-RESISTANCE (OHM) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8 Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.4 1.2 1 0.
PAGE 7
FDC6333C Typical Characteristics: P-Channel (continued) 300 ID = -2.0A f = 1MHz VGS = 0 V -10V VDS = -5V 250 8 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 CISS 200 150 COSS 100 2 50 CRSS 0 0 0 1 2 3 4 5 0 5 Qg , GATE CHARGE (nC) Figure 17. Gate Charge Characteristics. 15 20 25 30 Figure 18. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 5 RDS(ON) LIMIT 10 1 VGS = 10V SINGLE PULSE R θJA = 180oC/W 0.
PAGE 8
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