Data Sheet

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FDC638APZ P-Channel 2.5V PowerTrench

Specified MOSFET

October-2017, Rev.2

Publication Order Number:

FDC638APZ/D

FDC638APZ

P-Channel 2.5V PowerTrench

Specified MOSFET

–20V, –4.5A, 43mΩ

Features

 Max r

DS(on)

= 43mΩ at V

= –4.5V, I

= –4.5A

 Max r

DS(on)

= 68mΩ at V

= –2.5V, I

= –3.8A

 Low gate charge (8nC typical).

 High performance trench technology for extremely low r

DS(on).

 SuperSOT

–6 package:small footprint (72% smaller than

standard SO–8) low profile (1mm thick).

 RoHS Compliant

General Description

This P-Channel 2.5V specified MOSFET is produced using

ON Semiconductor’s advanced PowerTrench

process

that has been especially tailored to minimize the on-state

resistance and yet maintain low gate charge for superior

switching performance

These devices are well suited for battery power applications:load

switching and power management,battery charging circuits,and

DC/DC conversion.

Application

 DC - DC Conversion

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage –20 V

Gate to Source Voltage ±12 V

Drain Current -Continuous (Note 1a) –4.5

-Pulsed

–20

Power Dissipation (Note 1a) 1.6

Power Dissipation (Note 1b) 0.8

, T

STG

Operating and Storage Junction Temperature Range –55 to +150 °C

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 78

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1b) 156

Device Marking Device Reel Size Tape Width Quantity

.638Z FDC638APZ 7’’ 8mm 3000 units

SuperSOT

-6

Pin 1

Summary of content (5 pages)

PAGE 1
P-Channel 2.5V PowerTrench® Specified MOSFET General Description –20V, –4.5A, 43mΩ Features This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance Max rDS(on) = 43mΩ at VGS = –4.5V, ID = –4.5A Max rDS(on) = 68mΩ at VGS = –2.5V, ID = –3.8A Low gate charge (8nC typical).
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = –250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient –20 ID = –250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V mV/°C –9.4 VDS = –16V, –1 VGS = 0V TJ = 55°C –10 VGS = ±12V, VDS = 0V µA ±10 µA –1.
PAGE 3
2.2 VGS = -2.5V -ID, DRAIN CURRENT (A) VGS = -3.0V 15 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 VGS = -3.5V VGS = -4.5V 10 VGS = -2.0V 5 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = -1.5V 0 0 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 4 1.6 1.4 1.0 0.8 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 Figure 3. Normalized On- Resistance vs Junction Temperature VDD = -5V 15 10 TJ = 150oC TJ = 25oC TJ = 1.5 -55oC 2.0 2.5 3.
PAGE 4
FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET Typical Characteristics TJ = 25°C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 5 2000 ID = -4.5A VDD = -5V 4 CAPACITANCE (pF) VDD = -10V 3 VDD = -15V 2 1 Coss f = 1MHz VGS = 0V 100 0 0 2 4 6 8 Qg, GATE CHARGE(nC) 10 70 0.1 12 Figure 7. Gate Charge Characteristics 1 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0.1 TJ = 150oC 0.
PAGE 5
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