Data Sheet

FDC638APZ P-Channel 2.5V PowerTrench
®
Specified MOSFET
www.onsemi.com
2
Electrical Characteristics T
J
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage I
D
= –250µA, V
GS
= 0V –20 V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= –250µA, referenced to 25°C –9.4 mV/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= –16V, –1
µA
V
GS
= 0V T
J
= 55°C –10
I
GSS
Gate to Source Leakage Current V
GS
= ±12V, V
DS
= 0V ±10 µA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= –250µA –0.4 –0.8 –1.5 V
∆V
GS(th)
∆T
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= –250µA, referenced to 25°C 2.9 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= –4.5V, I
D
= –4.5A 37 43
mΩV
GS
= –2.5V, I
D
= –3.8A 52 68
V
GS
= –4.5V, I
D
= –4.5A, T
J
= 125°C 50 72
I
D(on)
On-State Drain Current V
GS
= –10V, V
DS
= –4.5A –20 A
g
FS
Forward Transconductance V
DS
= –10V, I
D
= –4.5A 18 S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= –10V, V
GS
= 0V,
f = 1MHz
750 1000 pF
C
oss
Output Capacitance 155 210 pF
C
rss
Reverse Transfer Capacitance 130 195 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= –5V, I
D
= –4.5A
V
GS
= –4.5V, R
GEN
= 6Ω
6 12 ns
t
r
Rise Time 20 31 ns
t
d(off)
Turn-Off Delay Time 48 77 ns
t
f
Fall Time 47 72 ns
Q
g(TOT)
Total Gate Charge V
GS
= 0V to –4.5V
V
DD
= –5V
I
D
= –4.5A
8 12 nC
Q
gs
Gate to Source Gate Charge 2 nC
Q
gd
Gate to Drain “Miller” Charge 2 nC
(Note 2)
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain-Source Diode Forward Current –1.3 A
V
SD
Source to Drain Diode Forward Voltage V
GS
= 0V, I
S
= –1.3A (Note 2) –0.8 –1.2 V
t
rr
Reverse Recovery Time
I
F
= –4.5A, di/dt = 100A/µs
24 36 ns
Q
rr
Reverse Recovery Charge 13 20 nC
Notes:
1: R
θJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.R
θJC
is
guaranteed by design while R
θCA
is determined by user’s board design.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
a. 78°C/W when mounted on
a 1 in
2
pad of 2 oz copper on
FR-4 board.
b. 156°C/W when mounted on a
minimum pad of 2 oz copper.